2SB1251 Search Results

Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage

2SD1891

Abstract: 2SB1251
Contextual Info: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage

2SB1251

Abstract: 2SD1891
Contextual Info: Power Transistors 2SB1251 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit –110 V –90 V –5 V –7 A –4 A Collector to base voltage VCBO Collector to emitter voltage

Contextual Info: Power Transistors 2SD1891 2SD1891 Silicon N P N Tripie-D iffused P lanar Darlington Type Package D im ensions Pow er A m plifier C om plem entary Pair w ith 2SB1251 • Features • Optimum for 3 0 W hi-fi output • High DC c u rre n t gain Iif e : 5000~30000

2SB1251

Abstract: 2SD1891
Contextual Info: Power Transistors 2SD1891 2SD1891 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier Complementary Pair with 2SB1251 • Features Package Dimensions Unit ' mm • O p tim u m fo r 3 0 W hi-fi o u tp u t • H igh D C c u r r e n t gain Iife :

Contextual Info: Power T ransistors 2SB1251 2SB1251 Silicon PNP Epitaxial Planar Darlington Type Package D im ensions U nit : mm 4.4 max. 10.2max. 5.7max. Pow er Am plifier C om plem entary Pair with 2 S D 1891 2.9max. • Features • • • • Optimum for 30W hi-fi output

2SB1251

Abstract: 2SD1891
Contextual Info: Power T ransistors 2SB1251 2SB1251 Silicon PNP Epitaxial Planar Darlington Type P ackage D im ensions U n it : mm Power Am plifier C om plem entary Pair with 2 S D 1891 4.4m ax. 10.2max, 5.7m ax. 2.9max • Features • Optimum for 30W hi-fi output • High DC cu rre n t gain Iife : 5000—30000

2SB1251

Abstract: 2SD1891
Contextual Info: Power Transistors 2SB1251 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –110 V Collector to emitter voltage VCEO –90 V Emitter to base voltage VEBO –5 V

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SD1915

Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Contextual Info: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915

2SB1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm • Features 6.0±0.2 1.0±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Base current

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm 1.0±0.1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open)

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SB1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 8

2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5