D2254 Search Results

d2254

Abstract: D2254UK
Contextual Info: TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package PIN 1 Source Common PIN 5 Source (Common)

Contextual Info: TetraFET D2254UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C D E B 8 1 2 7 R A 3 6 F 5 4 Q O N M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL J K L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

d2254

Abstract: D2254UK
Contextual Info: TetraFET D2254UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package

D2254UK

Contextual Info: TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package • SUITABLE FOR BROAD BAND APPLICATIONS

D2254UK

Abstract: D2254
Contextual Info: TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL L I P FEATURES H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package • SUITABLE FOR BROAD BAND APPLICATIONS

d2254

Contextual Info: SP4T RF SWITCH MODEL TW D2254 Available in: D P -10,16 Pin DIP Package and Connectorized Housings Features Maximum Ratings • ■ ■ ■ ■ Ambient Operating Temperature. - 55 °C to + 100 °C Storage Temperature.- 65 °C to + 125 °C

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

MAX 77686 g

Abstract: MAX 77686 CDF 6D5 7B396 D5564 D898B d5623 c4369 0/MAX 77686 g 49/MAX 77686 g
Contextual Info: 7C8F8F8DC8DD8 DFD8CD8F 12344567 8 44ABCD8BCAECFDC8FCCFEFCCF 1D F8 EFC!DC8 " 3#6D55677$%4634D54&3' 34D54&362D43 7F6 C7716 A3(B6 46 D6 5$236 34D54&3' 34D54&36 >3(?6 FD6 ED6 F526 444&6 F6 E

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon