D5017 Search Results

Contextual Info: TetraFET D5017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

d5017

Abstract: D5017UK idq06 42 swg enamelled copper wire swg copper wire datasheet 25 32 FT-82
Contextual Info: TetraFET D5017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

d5017

Abstract: D5017UK
Contextual Info: TetraFET D5017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

GNS430

Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Contextual Info: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon

d5017

Abstract: 3DD5017 VCBO-1200V Jilin Sino-Microelectronics of transistor 6V 1A
Contextual Info: Case-rated bipolar transistor for type D5017 for low frequency amplification R D5017 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=1200V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV