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2SB1463 Datasheets (10)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB1463	Panasonic	Silicon PNP epitaxial planer type	Original	PDF	49.04KB	3
2SB1463	Panasonic	Silicon PNP epitaxial planer type	Original	PDF	35.94KB	2
2SB1463	Panasonic	Silicon PNP Transistor	Original	PDF	46.18KB	3
2SB1463	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	88.87KB	2
2SB1463	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	122.52KB	1
2SB1463	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	34.8KB	1
2SB1463GRL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3	Original	PDF		4
2SB1463IT	Panasonic	Silicon PNP Epitaxial Planar Type Transistor	Original	PDF	76.07KB	3
2SB1463J	Panasonic	Transistor for high breakdown voltage low-noise amplification. Complementary to 2SC2440J	Original	PDF	84.61KB	3
2SB1463JRL	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 150VCEO 50MA SSMINI-3	Original	PDF		3

2SB1463 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB1463J Abstract: SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification	Original	2002/95/ec 2sb1463j 2sc2440j sc-89	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01	Original	2002/95/ec 2sd2240j 2sb1463j	PDF
D2375 Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A	OCR Scan	125mw 2sc4627 2sc5021 2sa1790 +162sc4626 2sc4655 2sc4809 2sc5295 2sc4808 2sa1806 d2375 d1259a d1267a d1265a transistor 2sa1949 2sd2328a transistors selection guide d1261a c3795 2sb1526	PDF
2SB1463J Abstract: 2SD2240J SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J	Original	2002/95/ec 2sd2240j 2sb1463j sc-89	PDF
2sc2440 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO	Original	2002/95/ec 2sb1463g 2sc2440g 2sc2440	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c	Original	2002/95/ec 2sb1463g 2sc2440g	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01	Original	2002/95/ec 2sd2240j 2sb1463j	PDF
D1276A Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463	OCR Scan	2sc4609 2sc4808 2sa1806 2sc4627 +162sa1790 2sc4626 2sc4655 2sd2345 2sc46 12sa1 d1276a b1419 d638 transistor b1361 ic 1271a d1273 d1985a b947a b1178 1985a	PDF
Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO	Original	2sb1463 2sd2240 sc-75	PDF
2SB1463J Abstract: SC-89 Contextual Info: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C	Original	2sb1463j 2sc2440j sc-89	PDF
2SB1463 Abstract: 2SD2240 Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage	Original	2sb1463 2sd2240	PDF
2SB1463J Abstract: 2SD2240J SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01	Original	2002/95/ec 2sd2240j 2sb1463j sc-89	PDF
2SB1463 Abstract: 2SD2240 Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage	Original	2sb1463 2sd2240	PDF
2SB1463 Abstract: 2SD2240 SC-75 SJC00089BED Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO	Original	2sb1463 2sd2240 sc-75 sjc00089bed	PDF

2SB1463J Abstract: 2SD2240J SC-89 Contextual Info: Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C	Original	2sd2240j 2sb1463j sc-89	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01	Original	2002/95/ec 2sb1463j 2sc2440j	PDF
2SB1463J Abstract: 2SD2240J SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J	Original	2002/95/ec 2sd2240j 2sb1463j sc-89	PDF
2SB1463 Abstract: 2SD2240 Contextual Info: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 0.2+0.1 –0.05 3 Symbol Ratings Unit VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage	Original	2sb1463 2sd2240	PDF
SC-75 Abstract: 2SB1463 2SD2240 Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and	Original	2sb1463 2sd2240 sc-75	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO	Original	2002/95/ec 2sb1463g 2sc2440g	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO	Original	2002/95/ec 2sb1463g 2sc2440g	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO	Original	2002/95/ec 2sb1463g 2sc2440g	PDF
2SB1463 Abstract: 2SD2240 SC-75 SSMini3-G1 Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current	Original	2sb1463 2sd2240 sc-75 ssmini3-g1	PDF
2SB1463J Abstract: SC-89 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification	Original	2002/95/ec 2sb1463j 2sc2440j sc-89	PDF

2SB1463 Search Results

2SB1463 Datasheets (10)

2SB1463 Datasheets Context Search

2SB1463J

D2375

2SB1463J

2sc2440

D1276A

2SB1463J

2SB1463

2SB1463J

2SB1463

2SB1463

2SB1463J

2SB1463J

2SB1463

SC-75

2SB1463

2SB1463J