2SA1806 Search Results

2SA1806J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type For high speed switching • Features ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SA1806

Abstract: SC-75
Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 0.8±0.1 1.6±0.15 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current

2SA1806

Abstract: SC-75
Contextual Info: Transistors 2SA1806 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High speed switching • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

2SA1806J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 Unit: mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high speed switching • Features

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SA1806

Contextual Info: Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 Ratings Unit VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)

2SA1323

Abstract: 2SC4973 2SA838 12SC1 2SC1047 2SA1739 2SA1806 2SC3811 2SC3938 2SC4691
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type S S Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

3V62

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806G Silicon PNP epitaxial planar type For high speed switching • Package • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SA1806J

Abstract: SC-89
Contextual Info: Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high speed switching 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2SA1806

Contextual Info: Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1˚ Parameter Symbol Ratings Unit VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current

2SA1806J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1806J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

2SC5021

Abstract: 2SA1888 D49 transistor TS 12164 2sc4973 2sc2188 2SC4969 panasonic silicon can tuner 2SA1738 2SA1739
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

2SA1806

Contextual Info: Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 Ratings Unit VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current

2sc5021

Abstract: 2SA1323 2SC4969 2SA 10G 2SA838 2SC4670 2SC4973 2SC5020 2sc2188 VCO 10G
Contextual Info: Transistors Selection Guide by Applications and Functions High Speed Switch *VC O and High Frequency Type Package (No.) Application Functions SS Mini Type (D1) High speed switch VCO and high freq. type S Mini Type (D5) Mini Type (D10) 2SA1806 2SA1739 2SA1738

2sc4973

Abstract: 2SC5020 2SC2671
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the