2SC3938 Search Results

2SC3938

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 3 Collector current Peak collector current

2sc3943

Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Contextual Info: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —

Contextual Info: Panasonic Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed sw itching U n it: m m 0.425 • Features • High-speed switching. • • Low collector to em itter saturation voltage V c E s a t S-M ini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739G Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938G • Features ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Low collector-emitter saturation voltage VCE(sat)

2SC3938G

Abstract: IC12080
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching Complementary to 2SC3938G • Features ue pl d in an c se ed lud pl vi an m m es

2SA1739

Abstract: 2SC3938
Contextual Info: Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High speed switching • Low collector-emitter saturation voltage VCE(sat)

2SC3938G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938G Silicon NPN epitaxial planar type For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938G Silicon NPN epitaxial planar type For high-speed switching • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

2SC3938

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚ M Di ain sc te

marking Ax

Abstract: 2SA1739 2SC3938
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/

2SC3938G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

2SC3938

Contextual Info: Transistors 2SC3938 Silicon NPN epitaxial planar type For high-speed switching 0.425 Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10 0.9±0.1 3 • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

2SA1739

Abstract: 2SC3938
Contextual Info: Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching 0.425 Unit: mm +0.1 0.3Ð0.0 • Features 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10

2SA1739

Abstract: 2SC3938
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1

2SA1323

Abstract: 2SC4973 2SA838 12SC1 2SC1047 2SA1739 2SA1806 2SC3811 2SC3938 2SC4691
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type S S Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

2SC3938G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3938G Silicon NPN epitaxial planar type For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • S-Mini type package, allowing downsizing of the equipment and

2SA1739

Abstract: 2SC3938
Contextual Info: Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching 0.425 Unit: mm +0.1 0.3Ð0.0 • Features ● 5û 1 2 0.2±0.1 ● 2.1±0.1 ● 3 High-speed switching. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and

transistor marking 2y

Abstract: 2SA1739 2SC3938
Contextual Info: Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1±0.1 • Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage