2SC4691 Search Results

2SC4691J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SC4691J

Abstract: SC-89
Contextual Info: Transistors 2SC4691J Silicon NPN epitaxial planar type For high speed switching 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Symbol Rating Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 40 V Collector-emitter voltage (E-B short)

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 0.2+0.1 –0.05 • Features 1˚ Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SC4691

Abstract: SC-75
Contextual Info: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features Emitter-base voltage Collector open Collector current Peak collector current Collector power dissipation

2SC4691

Contextual Info: Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● High-speed switching. Low collector to emitter saturation voltage VCE sat . SS-Mini type package, allowing downsizing of the equipment

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-speed switching • Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

Contextual Info: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 40 V Collector-emitter voltage (E-B short)

2SC4714

Abstract: 2SC4691 2SC4703 2SC470-3 2SC4723 HV COB 2SC4692 2SC4693 2SA1827 2SC4695
Contextual Info: - 212 - 13=25*0, *En(àTc=25tî m 2SC4691 2SC4692 2SC4693 2SC4694 2SC4695 2SC4696 2SC4699K 2SC4700 2SC4702 2SC4703 2SC4704 2SC4705 2SC4708 2SC4709 2SC4710 2SC4713K 2SC4714 2SC4723 2SC4727 2SC4728 2SC4729 2SC4730 2SC4731 2SC4735 2SC4736 2SC4737 2SC4740 2SC4741

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691G Silicon NPN epitaxial planar type For high-speed switching • Features ■ Package • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and

2SC5021

Abstract: 2SA1888 D49 transistor TS 12164 2sc4973 2sc2188 2SC4969 panasonic silicon can tuner 2SA1738 2SA1739
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch *VCO and High Frequency Type Package (No.) Application Functions High speed switch VCO and high freq. type SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938

Contextual Info: Panasonic Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed sw itching U nit: mm • 1.6+0.15 0.4 0.8+0.1 0.4 Features I1 m 1 Ö Ö +1 O U ÖÌ i1_L r 2 • High-speed switching. • Low collector to emitter saturation voltage V c E s a t • SS-Mini type package, allowing downsizing of the equipment

2SC4691J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

2SC4691

Abstract: SC-75
Contextual Info: Transistors 2SC4691 Silicon NPN epitaxial planar type For high-speed switching Unit: mm 0.2+0.1 –0.05 • Features ■ Absolute Maximum Ratings Ta = 25°C Collector-base voltage Emitter open VCBO 40 V Collector-emitter voltage (E-B short) VCES 40 V Emitter-base voltage (Collector open)

2SC4691J

Abstract: SC-89
Contextual Info: Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2SC4691J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4691J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-speed switching 0.12+0.03 –0.01

2sc4973

Abstract: 2SC5020 2SC2671
Contextual Info: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the