2SC4627 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) 5˚

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

marking UD

Abstract: 2SC4627
Contextual Info: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SC4627J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03

2SC4627

Abstract: SC-89
Contextual Info: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open)

Contextual Info: Panasonic Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency am plification U nit: mm • Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

2SC4627

Abstract: SC-75
Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 0.4 Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20

2SC4627

Abstract: SC-75
Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Collector power dissipation

2SC4627G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT • SS-Mini type package, allowing downsizing of the equipment and

2SC4627J

Contextual Info: Transistor 2SC4627J Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.60±0.05 0.80 0.80±0.05 0.425 0.425 0.50 0.27±0.02 0.50 +0.05 1.00±0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC4627

Contextual Info: Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: Transistors 2SC4627 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 Unit Collector-base voltage Emitter open VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open)

2SC4614

Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
Contextual Info: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03

2SC4627J

Abstract: SC-89
Contextual Info: Transistors 2SC4627J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: Panasonic Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency am plification • U nit: mm 0.4 Features • Optimum for RF amplification of EM/AM radios. • High transition frequency fT. • SS-Mini type package, allowing downsizing of the equipment

2SC4627G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4627G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

D1274A

Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Contextual Info: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and