2N4908 Search Results

2N4908

Contextual Info: 2N4908 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N4909

Abstract: 2N4908 2N4907
Contextual Info: SavantIC Semiconductor Product Specification 2N4907 2N4908 2N4909 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Excellent safe operating areas APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1

Contextual Info: 2N4908 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N4908 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N5286

Abstract: 2N540S 2N5867 2N5872 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905
Contextual Info: \ P I ELECTRONICS INC Eb DE | DÜMBSTS □□□□2Eb 7 |^T-3 3-Ot COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

Contextual Info: P I ELECTRONICS INC Eb d F | □□MBS'iS OOOOSEb 7 |^*T-3 3-01 COLLECTOR CURRENT =5 AMPS PNP TYPES - CONTINUED Device No 2N3868 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N4999 2N5001 2N5003 2N5005 2N5147 2N5149 2N5286 2N5287 2N5333

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3775

Abstract: 2N3202 2N3203
Contextual Info: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203

BD607

Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)

2N3171

Abstract: 2N3022 2N3195 2N3202 2N3183 2N3025 2N3026 2N3172 2N3719 2N3021
Contextual Info: industrial power transistors 128 SILICON PNP TRANSISTORS 5 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719

MJE3055F

Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
Contextual Info: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)

2N3713

Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790
Contextual Info: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —