E69369 Search Results

mbr2506

Abstract: MBR25060V
Contextual Info: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

MJF31C

Abstract: 221D MJF32C
Contextual Info: MJF31C* NPN , MJF32C* (PNP) *Preferred Devices Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage – VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc

221D

Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES

Contextual Info: MOTOROLA O rder this docum ent by BUL45/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 45* BUL45F* NPN Silicon Power Transistor ‘ Motorola Preferred Device High Voltage SWITCHMODE™ Series POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features

221D

Abstract: AN1040 MJF47 MJF47G TIP47
Contextual Info: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the

Contextual Info: MURF820 Advance Information SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature

MBRF1545CT

Contextual Info: MBRF1545CT SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

Contextual Info: MAC212A6FP, MAC212A8FP, MAC212A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are

Contextual Info: MCR218−6FP, MCR218−10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater

AN569

Abstract: MTE215N10E mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTE215N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE215N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 215 AMPERES

transistor mj 1503 motorola

Abstract: AN569 MTE30N50E tp 312 transistor
Contextual Info: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS

bta12

Abstract: BTA12 Application note bta12 application BTA12 snubber bta12 phase control application triac bta12 triggering BTA12 purpose BTA12 600 DATASHEET BTA12-600C4G bta12 600 triac circuit diagram for application
Contextual Info: BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • •

221D

Abstract: AN1040 MJE2955T MJE3055T MJF2955 MJF3055
Contextual Info: MJF3055 NPN , MJF2955 (PNP) Complementary Silicon Power Transistors Specifically designed for general purpose amplifier and switching applications. • • • • • • • • • http://onsemi.com Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

B745 MOTOROLA

Abstract: b745 diode b745 motorola an1040 RECTIFIER DIODES Motorola
Contextual Info: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r MBRF745 The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features

BRF20200CT

Abstract: Schottky com anode TO220
Contextual Info: MOTOROLA Order this document by MBRF20200CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Schottky Power R ectifier M BRF20200CT The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area m eta l-to -silico n power diode. S ta te -o f-th e -a rt geometry features

221D

Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light

221D

Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18008/D SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES

b20100

Abstract: B20100 diode MBRF20100CT
Contextual Info: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

mjf18004

Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art