MJE210 Search Results

MJE200

Abstract: 1N5825 MJE210 MSD6100
Contextual Info: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —

MJE210

Contextual Info: MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to MJE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE2160

Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Contextual Info: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications

Contextual Info: 7R5R537 OQaqOTI M: • / T m 3 1 - 0 7 _ SCS-THOMSON g^ gm[iCT«(gS_ S G MJE200 MJE210 S-THOMSON 30E ] COMPLEMENTARY POWER TRANSISTORS DESC RIPTIO N The MJE200 (NPN type) and MJE210 (PNP type) are silicon epitaxial-base transistors in Jedec

Contextual Info: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain

1N5825

Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100
Contextual Info: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE200

Abstract: MJE210
Contextual Info: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Transistor 834

Abstract: MJE210 TRANSISTOR B 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

MJE200

Abstract: MJE210
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic V obo

MJE200G

Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS

MJE210

Contextual Info: MJE210 SILICON PNP TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM

MJE200

Abstract: MJE210
Contextual Info: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJE200

Abstract: MJE210
Contextual Info: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —

MJE200

Abstract: MJE210
Contextual Info: MJE200, MJE210 continued PNP MJE210 NPN MJE200 h FE< °C CURRENT G A IN F IG U R E 8 - D C C U R R E N T G A I N lc , C O L L E C T O R C U R R E N T (A M P) y, V O LT AG E (VO LTS) F IG U R E 9 - " O N " V O L T A G E 1C, C O L L E C T O R C U R R E N T (A M P)

MJE200

Abstract: MJE210 NA180
Contextual Info: MJE210 PNP EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC= -100mA TO-126 • Complement to MJE200 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Collector-Emitter Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR MJE200 LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA T O -126 • C om plem ent to MJE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO

1N5825

Abstract: MJE200 MJE210 MSD6100
Contextual Info: ON Semiconductort NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage —

mje520

Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Contextual Info: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50

MJE200

Abstract: MJE200TSTU
Contextual Info: MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to MJE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

la 4142

Abstract: MJE340 MJE200 MJE210 MJE350 300V transistor pnp 2a 3V to 300V transformer
Contextual Info: SAMSUNG S EM I C ONDU C T OR INC MJE210 14E O J j 71134142 QQGVbTfl 3 | PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz @ lc=-100m A Complementary to MJE200

MJE210

Abstract: MJE200 to126 case Power Transistors TO-126 Case
Contextual Info: MJE200 MJE210 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER

MJE210

Abstract: TRANSISTOR B 834 Transistor 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.

Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP