221D Search Results

transistors c 2216

Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05

tip1012

Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
Contextual Info: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching

221D

Abstract: 2-2-1D
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–02 ISSUE D DATE 11/28/1992 SCALE 1:1 –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F

340D-01

Abstract: MBR3545 MBR3045PT motorola 340E-01 221A-06 MBR3045WT
Contextual Info: MOTOROLA SC C DIO DES/OPTO 3 TE ]> a b 3 b ? 2 SS 0G03aG2 G Q M 0 T 7 T -o ^-O Ì *Iq , AVERA G E RECTIFIED FORWARD CURRENT Amperes) 30 25 221D-02 ISOLATED TO-220 O-W-i 11-03 (TO-204AA) o *h 221A-06 (TO-220AB) 340E-01 (TO-218) 340F-01 (TO-247) 340D-01

221D-03

Abstract: 221D
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. SEATING

221D-03

Abstract: 221D 221D-01 221d01
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–03 ISSUE G DATE 03/19/2002 SCALE 1:1 –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW

IV-70

Abstract: 221D
Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : o- 1 3 .0 0 Max 9f l QD Mn v o_a X X ~n ~n iv> 70 Ln in o CD -< I I < o ^ 3. Electrical Specifications: In d u c ta n c e : 2 5 0 .9 0 u H ± 2 0 % 10.00± 3.00 DC Res.: D .221D O hm s Max DC C u rre n t:

R125 680 000

Abstract: 221D
Contextual Info: SMA RECEPTACLES PRESS MOUNT RECEPTACLES Fig. 1 Part number Fig. 2 Fig. 3 Fig. Captive center contact Panel Finish Note R125 590 001D 1 yes P17 Passivated Solder pot R125 590 201D 2 yes P18 Passivated Straight terminal R125 590 221D 3 yes P16 Passivated Straight terminal

221D

Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

MTP3055EL

Abstract: MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10
Contextual Info: TT TMOS TMOS Power MOSFETs Logic Level Power MOSFETs ISOLATED TO-220 CASE 221D-02 MTA PREFIX T0-220AB CASE 221A-06 (MTP PREFIX TO-251* CASE 369-05 (MTD PREFIX) TO-252 CASE 369A-09 (MTD PREFIX) Logic level M O SFETs are fu lly en ha nce d w ith 5 volts applied to the gate.

221D

Abstract: UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218
Contextual Info: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor

221A-06

Abstract: 221D-02 MPPD2021 mla1n06cl ccogn
Contextual Info: V T M O S CASE 221D-02 ISOLATED TO-220 MLA PREFIX (MPPD PREFIX) S T0-220AB CASE 221A-06 (MLP PREFIX) The SMARTDISCRETE Concept MLA1N06CL and MLP1N06CL From a stan dard po w e r M O S F E T pro cess, several active and passive elem e nts can be o b tain ed tha t provide on-chip

ndf02n60zg

Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

taiyo yuden umk

Abstract: UMK107 TMK105CH UMK105 EMK105A tmk063
Contextual Info: iflJtffiflfffl-C lass 1 ST A N D A R D M U L T IL A Y E R C E R A M IC C A PA C IT O R S (CL AS SI : TEMPERATURE COMPENSATING DIELECTRIC TYPE) OPERATING TEMP. -5 5 ~ + 1 2 5 ”C •Improve Higher Mounting Densities. • Multilayer block structure provides higher reliability

221ak

Contextual Info: Tem ic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • A ccepts 150-ns W rite Pulse W idth Applications C om patible w ith M ost ^iP Buses A llow s W ide Pow er Supply Tolerance W ithout A ffecting TTL C om patibility

Contextual Info: Temic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • Accepts 150-ns W rite Pulse W idth • 5-V O n-C hip Regulator • Built on PLU S-40 Process • Latches Are Transparent with W R Low • Low O n-R esistance: 60 Q

Contextual Info: MURHF860CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times

smd diode 1d

Abstract: diode smd 1D 3361d 2-13-1D 2-13-1W 2-16-6D 2-16-6W 3-16-1D 3-16-1W 3-36-1D
Contextual Info: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω

221D

Abstract: MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840
Contextual Info: MJF44H11 NPN , MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in

b30h60g

Abstract: 221D 418D MBR30H60CTG MBRB30H60CT MBRF30H60CTG B30H60 b30h60g DIODE
Contextual Info: MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG SWITCHMODE Power Rectifier 60 V, 30 A http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity

221D

Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art

Contextual Info: Resistors/Thermistors NTC for Temperature Compensation 0603 1608 Size (Ag A-loy - N i Plating + Sn Pla ting , P a rt N u m b e r R e s is ta n c e (2 5 “C ) Resistors/Thermistors 2 (in m rr) B -C o n s ta n t (2 5 -5 0 ° G ) (K) M a x . O p e ra tin g

Diode LT 228d

Abstract: 1E2H SMD making code DV5
Contextual Info: 7: 43 AM PM4323 OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released ,0 ay co n Th ur sd OCTLIU LT 1M ay ,2 00 8 01 :0 PM4323 of Pa rtm in er In Device Telecom Standard Product Proprietary and Confidential Released Issue No. 5: April 2008 Do