221D01 Search Results

ndf02n60zg

Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

JF18006

Contextual Info: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Contextual Info: NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

221D

Abstract: A114 JESD22 NDF11N50ZG
Contextual Info: NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted

B30H100G

Contextual Info: MBR30H100CT, MBRF30H100CT SWITCHMODE Power Rectifier 100 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity

b30h60g

Contextual Info: MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG http://onsemi.com SWITCHMODE Power Rectifier 60 V, 30 A SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS 1 2, 4 Features and Benefits •        

BRF1545CT

Contextual Info: Order this data sheet by MBRF1545CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M BRF1545CT Advance Information SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 15 AMPERES and 45 VOLTS The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a

Contextual Info: Order this data sheet by MBRF20100CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Schottky Pow er R ectifiers The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial

B20H100G

Abstract: B20H100G aka B20H100 SCHOTTKY BARRIER RECTIFIER aka B20H100G
Contextual Info: MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, MBRJ20H100CTG, NRVBB20H100CTT4G SWITCHMODE Power Rectifier 100 V, 20 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS Features and Benefits •      1 Low Forward Voltage: 0.64 V @ 125C

Contextual Info: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

B30L45G

Abstract: B30L45 MBRF30L45CTG 221D MBR30L45CTG
Contextual Info: MBR30L45CTG, MBRF30L45CTG SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity

ndf03n60zg

Abstract: NDD03N60Z 221D 369D A114 NDD03N60Z-1G 60ZG
Contextual Info: NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS on (TYP) @ 1.2 A 600 V 3.3 W

NDF04N60ZG

Abstract: NDD04N60ZT4G 221D 369D A114 JESD22 NDP04N60ZG 60ZG
Contextual Info: NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 1.8 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS on (TYP) @ 2 A 600 V 1.8 Ω

u1620G

Abstract: U1620 aka rectifier u1620G u1620 u1620G aka U1620 diode u1620 c aka U1620 G MURF1620CTG MURF1620CT
Contextual Info: MURF1620CT Preferred Device SWITCHMODEt Power Rectifier These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features http://onsemi.com •ăUltrafast 35 Nanosecond Recovery Times •ă150°C Operating Junction Temperature

B20100G

Abstract: B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100
Contextual Info: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

B30L45G

Abstract: MBR30L45CTG MBRF30 221D MBRF30L45CTG B30L45
Contextual Info: MBR30L45CTG, MBRF30L45CTG SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits •ăLow Forward Voltage •ăLow Power Loss/High Efficiency •ăHigh Surge Capacity •ă150°C Operating Junction Temperature •ă30 A Total 15 A Per Diode Leg

Contextual Info: NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDD03N60Z

Contextual Info: NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

B40250TG

Abstract: MBRB40250TT4G B40250 B40250G 221B-04
Contextual Info: MBR40250, MBR40250T, MBRF40250T, MBRB40250T 250 V, 40 A SWITCHMODE] Schottky Power Rectifier Features • • • • • http://onsemi.com 250 V Blocking Voltage Low Forward Voltage Drop, VF = 0.86 V Soft Recovery Characteristic, TRR < 35 ns Stable Switching Performance Over Temperature

NDF10N60ZG

Abstract: 221D A114 JESD22 NDP10N60Z
Contextual Info: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

b10l60g

Abstract: B10L60 221D MBR10L60CTG MBRF10L60CTG
Contextual Info: MBR10L60CT, MBRF10L60CT SWITCHMODE Power Rectifier 60 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total 5 A Per Diode Leg

B2045G

Abstract: MBR2045CTG B2045G AKA b2045 MBRF2045CTG MBR2045CTG TO220 221D-03 221D MBR2045CT MBRF2045CT
Contextual Info: MBR2045CT, MBRF2045CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*