BD157 Search Results

BD157

Abstract: BD158
Contextual Info: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

bd157

Abstract: d159
Contextual Info: rZ 7 SGS-THOMSON Ä TI « E Udra «! BD157/8/9 LOW POWER FAST SWITCHING DESCRIPTIO N The BD157, BD158 and BD159 are silicon epitaxial planar NPN transistors in TO-126 plastic package, intended for applications in low power linear and switching. ABSO LU TE MAXIM UM RATINGS

BD158

Abstract: bd159 BD157
Contextual Info: BD157/158/159 NPN EPITAXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V. RADIO AUDIO OUTPUT AMPLIFIERS TO -126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage: BD157 : BD158

Contextual Info: BD157, BD158 BD157,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE "V FT1_ Q1M Æ - 7.8 B 10.5 10.8 C 2.4 2.7 0.7 0.9 F -M JL- J eU L-g—

BD158

Abstract: BD159 bd157
Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD157 Symbol Rating VcBO : BD158 : BD159 Collector Emitter Voltage : BD157

BD159

Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage : BD157 : BD158

BD157

Abstract: BD158
Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And

transistor BD 325

Abstract: transistor BD 240 transistor bd 375 transistor BD 157 Motorola Bipolar Power Transistor Data BD157 TRANSISTOR 158
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 2 5 0 -3 0 0 -3 5 0 VOLTS

Contextual Info: BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.

BD159

Abstract: BD157 BD158 0001 TRANSISTOR B0158
Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 275 V : BD158 325 V : BD159 375 V 250 V : BD158 300 V : BD159 350 V 5 V A C ollector Base Voltage

JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168

BD158

Abstract: BD157
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.

bd157

Contextual Info: BD157/158/159 NPN EPITXIAL SILICO N TRANSISTO R LOW POWER FAST SWITCHING OUTPUT STA G ES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD157 : BD158 : BD159 Collector Emitter Voltage : BD157 : BD158

transistor BD 325

Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA
Contextual Info: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE

Contextual Info: _ • r r r 755q537 s g s - th o m ^ 7# Dosaaa? t jrT r'S 3 '0 °i _ s o n « t H S t m i C T « ! _ _ B D 1 5 7 / 8 / 9 S G S-THOMSON 3ÜE » LOW POWER FAST SWITCHING DESC RIPTIO N The BD157, BD158 and BD159 are silicon epitaxial

Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 275 V : BD158 325 V : BD159 375 V 250 V : BD158 300 V : BD159 350 V 5 V A C ollector Base Voltage

BD157

Abstract: BD158 BD159
Contextual Info: BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

BD157STU

Contextual Info: BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

BD159

Abstract: BD158 BD157
Contextual Info: BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

transistor mje29

Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
Contextual Info: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific