BD652 Search Results

transistor bd649

Abstract: BD651 SILICON COMPLEMENTARY transistors darlington COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS BD649 BD652
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652

BD6521F

Abstract: BD6520F
Contextual Info: 00W056A Power management switching IC BD6520F/BD6521F Description Dimension Units : mm The BD6520F, BD6521F is a power management switching IC that includes Low ON resistance MOSFET. Soft start and discharge circuit are included. It reduces influence on the load when

bd648

Abstract: bd652
Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

Contextual Info: BD6522F Power Management Switch ICs for PCs and Digital Consumer Products Load Switch ICs for Potable Equipment BD6520F,BD6522F No.11029EBT12 ●Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.

BD647

Abstract: BD651 BD649 BD649 equivalent BD645 BD646 BD648 BD650 BD652
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE TOP VIEW ● 62.5 W at 25°C Case Temperature

BD646

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A This series is obsolete and

Contextual Info: Power Management Switch ICs for PCs and Digital Consumer Products Load Switch ICs for Potable Equipment No.11029EBT19 BD6528HFV,BD6529GUL ●Description Power switch for memory card Slot BD6528HFV, BD6529GUL is a high side switch IC having one circuit of N-channel

ROHM Electronics

Abstract: BD6524HFV
Contextual Info: Reliability Test Result DEVICE : BD6524HFV RESULT ITEM METHOD n pn pcs (pcs) − 22 CONDITION Resistance to Soldering Heat (*2) After the moisture soaking treatment, carry out the soldering heat stress (IR reflow : peak 260℃) Thermal Shock (*1) 100℃(5min) / 0℃ (5min)

b0652

Abstract: BD648 BD652 bd650
Contextual Info: BD646, BD648, BOSSO, BD652 PNP SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations Limited. UK_ MAY 1993-REVISED MARCH 1997 • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature

Contextual Info: Power Management Switch ICs for PCs and Digital Consumer Products Load Switch IC for Portable Equipment BD6524HFV No.11029ECT13 ●Description Power switch for memory card Slot BD6524HFV is a high side switch IC having one circuit of N-channel Power MOS FET.

BD649

Abstract: BD645 BD651 BD647 BD649 equivalent bd650 bd649 Bd645 equivalent BD650 BD646 BD648
Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW

BD6529

Contextual Info: 1/4 Structure Silicon monolithic integrated circuit Product Power management switch IC Type BD6529GUL Feature Single channel of low on resistance Typ = 100mΩ N-channel MOSFET built in Reverse-current protection when power switch off Output discharge circuit

Contextual Info: BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 8 A Continuous Collector Current B 1 C 2 Minimum hFE of 750 at 3V, 3 A

Contextual Info: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.

Contextual Info: BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • MAY 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD645, BD647, BD649 and BD651 T0-220 PACKAGE TOP VIEW • 62.5 W at 25 C Case Temperature

Contextual Info: Datasheet Load Switch ICs 0.5A Current Load Switch ICs for Portable Equipment BD6524HFV General Description Key Specifications BD6524HFV is a high side switch IC using an N-Channel MOSFET and used as a power switch for in memory card slot. This switch has an ON-Resistance

Contextual Info: Datasheet Load Switch ICs 2.0A Current Load Switch ICs for Portable Equipment BD6520F BD6522F General Description BD6520F and BD6522F are power management switches N-Channel Power MOSFET with an ONResistance of 50mΩ (Typ). An internal charge pump drives the gate of the N-Channel Power MOSFET. Also,

Contextual Info: TECHNICAL NOTE Power Management Switch IC Series for PCs and Digital Consumer Product 1ch Small Current Output Power Managment Switch ICs BD6524HFV ●Description Power switch for memory card Slot BD6524HFV is a high side switch IC having one circuit of N-channel Power MOS FET.

09029EAT12

Abstract: 6522 mos BD6520F BD6522F MOS 6520 40 pin
Contextual Info: Power Management Switch IC Series for PCs and Digital Consumer Product Large Current Output Power Management Switch ICs BD6520F,BD6522F No.09029EAT12 Description The power switch for expansion module is a power management switch having one circuit of N-channel Power MOS FET.

transistor bd650

Abstract: b0648 b0652 BD646 BD648 BD650 BD652 BD645 BD647 BD649
Contextual Info: TBANSYS BD646, BD648, BD650, BD652 pnp silic o n p o w e r d a rlin g to n s mm fUCTROMICS LIMITED TO-220 PACKAGE TOP VIEW • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature B C • 8 A Continuous Collector Current

BD6520F

Contextual Info: Reliability Test Result DEVICE : BD6520F RESULT ITEM METHOD n pn pcs (pcs) − 22 CONDITION Resistance to Soldering Heat (*2) After the moisture soaking treatment, carry out the soldering heat stress (IR reflow : peak 260℃) Resistance to Soldering Heat (*2)

B0647

Abstract: B0645 bd649 TAG 064
Contextual Info: BOMS, BD647, BD649, BD651 NPN SILICON POWER DARUNG70NS Copyrtght C 1997, Power Innovations Limited, 1893 - REVISED M ARCH 1997 • Designed for Complementary Use with BD646, BD648, BD650 and BD652 • 62.5 W at 25°C Case Temperature

D6520

Abstract: d6522
Contextual Info: Datasheet Load Switch ICs BD6520F BD6522F ●General Description This power switch for expansion module is a power management switch having one circuit of N-channel Power MOSFET. The typical value of ON Resistance of the switch is as low as 50mΩ. The switch turns on

Contextual Info: Power Management Switch ICs for PCs and Digital Consumer Products Load Switch ICs for Portable Equipment No.11029ECT19 BD6528HFV,BD6529GUL ●Description Power switch for memory card Slot BD6528HFV, BD6529GUL is a high side switch IC having one circuit of N-channel