KSD985 Search Results

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-B ase Voltage V ceO 150 V C ollector-E m ltter Voltage : KSD985 V cE O

ksd 150 full safe

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985

KSD985

Abstract: KSD986
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE A BSOLUTE M AXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C o l le c to r-B a s e V o lta g e VcEO 150 V C o lle c to r-E m itte r V o lta g e : K S D 9 8 5

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage

BDX548

Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
Contextual Info: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8

D986-Y

Abstract: KSD986OS
Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

A 986 transistor

Abstract: SL 100 NPN Transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage

BC 251 transistor

Abstract: 50V 1A power transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO

KSD985

Abstract: KSD986
Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

1E80

Abstract: KSB772 KSD882 KSD985 PVK350 60V transistor npn 2a
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD882 IME D 00D?tl1.3 | NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 ' • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25*C Characteristic Symbol ; Collector-Base Voltage Collector-Emitter Voltage

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power