KSD882 Search Results

D882Y

Abstract: D882-y D882R TRANSISTOR D882-y KSD882YSTU D882-R
Contextual Info: KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage

1E80

Abstract: KSB772 KSD882 KSD985 PVK350 60V transistor npn 2a
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD882 IME D 00D?tl1.3 | NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 ' • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25*C Characteristic Symbol ; Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC

Contextual Info: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO -126 • Com plem ent to KSD882 ABSOLUTE MAXIMUM RATINGS C h a ra cte ris tic S ym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC

KSB772

Abstract: KSD882
Contextual Info: KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units Collector-Base Voltage

Contextual Info: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • C om plem ent to KSD882 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO - 40 V C ollector- E m itter Voltage V cE O - 30 V Em itter- Base Voltage

t 326 Transistor

Abstract: GE-325 I326
Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Unit Rating Collector- Base Voltage VcBO 40 V Collector-Emitter Voltage Emitter- Base Voltage

Contextual Info: KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage

KSB772

Abstract: KSD882
Contextual Info: KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units Collector-Base Voltage

KSB772

Abstract: KSD882 audio output TRANSISTOR NPN
Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING • C o m p le m e n t to K S B 7 7 2 A BSOLUTE M AXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C o lle c to r- B a s e V o lta g e VcBO 40 V C o lle c to r-E m itte r V o lta g e

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING T O -126 • C om plem ent to KSB772 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector- Base Voltage V cB O 40 V C ollector-E m itter Voltage

TO-126 fairchild

Contextual Info: KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Value Units Collector-Base Voltage

KSB772

Abstract: KSD882
Contextual Info: KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage

KSB772

Abstract: KSD882
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD882 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Rating Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSD882

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-126 • Complement to KSB772 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current DC

Contextual Info: KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage

Contextual Info: KSB772 KSB772 Audio Frequency Power Amplifier • Low Speed Switching • Complement to KSD882 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSB772 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING TO -126 • Complement to KSD882 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage C haracteristic VcBO -4 0 V Collector- Emitter Voltage VcEO - 30 V Emitter- Base Voltage

Contextual Info: KSD882 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • C om plem ent to KSB772 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C ollector- Base Voltage V cbO 40 C ollector-E m ltter Voltage VcEO 30 V V Em itter- Base Voltage

KS0882

Abstract: KSB772 KSB794 N500 OS5000
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB772 1ME D | TTbMma 0007515 5 PNP EPITAXIAL SILICON TRANSISTOR T-33-17 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to KSD882 \ ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.