KSC3502 Search Results
KSC3502 Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KSC3502 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 58.43KB | 5 | ||
| KSC3502 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR | Scan | 93.6KB | 3 | ||
| KSC3502 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 104.59KB | 1 | ||
| KSC3502 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 41.78KB | 1 | ||
| KSC3502C | Fairchild Semiconductor | CRT Display, Video Output | Original | 58.43KB | 5 | ||
| KSC3502D | Fairchild Semiconductor | CRT Display, Video Output | Original | 58.43KB | 5 | ||
| KSC3502E | Fairchild Semiconductor | CRT Display, Video Output | Original | 58.43KB | 5 | ||
| KSC3502ES | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 58.43KB | 5 | ||
| KSC3502ESTU | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 58.43KB | 5 | ||
| KSC3502F | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor | Original | 58.43KB | 5 |
KSC3502 Price and Stock
Samsung Electro-Mechanics KSC3502EPOWER BIPOLAR TRANSISTOR, 0.1A I(C), 200V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-126, PLASTIC/EPOXY, 3 PIN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KSC3502E | 240 |
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Buy Now | |||||||
KSC3502 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: KSC3502 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)100m Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.320 |
Original |
ksc3502freq150mstyleto-126 | |
KSC3502Contextual Info: KSC3502 KSC3502 CRT Display, Video Output • High Voltage : VCEO=200V • Low Reverse Transfer Capacitance: Cre=1.2pF @ VCB=30V TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted |
Original |
ksc3502o-126 | |
KSC3502
Abstract: static characteristic
|
OCR Scan |
ksc3502static characteristic | |
KSD 303
Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
|
OCR Scan |
ksa473ksa539ksa542ksa614+16 | |
KSD 166
Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
|
OCR Scan |
ksa473ksa539ksa542ksa614+16 | |
ksd 250v 10a
Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
|
OCR Scan |
ot-23ksc1623812/kscsa812/ksc+14 | |
2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
|
OCR Scan |
2n44012n54012n55512sa1004+16 |