KSA708 Search Results

KSC1008

Contextual Info: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage: VCBO=80V • Collector Current: IC=700mA • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C

KSA708

Contextual Info: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1

Contextual Info: KSC1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • C om plem ent to KSA708 High C ollector-Base Voltage: V Cb o = 8 0 V C ollector Current: lc=700m A C ollector Dissipation: Pc=800m W ABSOLUTE MAXIMUM RATINGS TA=25°C

VCS-60V

Abstract: KSA708 KSC1008
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D KSC1008 | 7*ib4].42 G O O b ö b b 4 | T -^ 9 - NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING • • • • Complement to KSA708 y ig h Collector-Base Voltage Vcso=80V Collector Current lc =700mA

KSA708

Abstract: KSC1008
Contextual Info: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSA708 TRANSISTOR PNP 1.EMITTER FEATURES z Low Saturation Medium Current Application 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSC1008

Abstract: KSA708
Contextual Info: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1

KSA708

Contextual Info: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSC1008 • Collector-Base Voltage: VCBO= -80V • Collector Dissipation: PC=800mW ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO

KSC1008

Abstract: KSA708
Contextual Info: KSA708 KSA708 Low Frequency Amplifier & Medium Speed Switching • • • • Complement to KSC1008 Collector-Base Voltage : VCBO= -80V Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1

NPN transistor to-92

Contextual Info: KSC1008 KSC1008 Low Frequency Amplifier Medium Speed Switching • • • • • Complement to KSA708 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base

OB5013

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KSC 1008 • Col lector-Base Voltage: VCbo= -80V • C ollector D issipation: Pc=8 0 0m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L KSA708 TRANSISTOR PNP 1. EMITTER 2. BASE FEATURES z Low Collector-Emitter Saturation Voltage z Low Frequency Amplifier&Medium Speed Switching 3. COLLECTOR

Contextual Info: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSC1Q08 • C ollect or-Base Voltage V c b o = -80V • Collector Dissipation P c=800mW ABSOLUTE MAXIMUM RATINGS T ft^ S t C h a ra cte ristic

Contextual Info: WEITRON KSA708 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Low Saturation Medium Current Application TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units VCBO VCEO VEBO

KSD 303

Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series D evice Page Device Page D evice Page KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182

KSD 166

Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220 KSA1241

C 1008 y transistor

Abstract: 1008 transistor transistor 1008 sC1008
Contextual Info: K SC 1008 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO-92 • Complement to KSA708 • High Collector-Base Voltage V cbo=80V • Collector Current lc=700mA • Collector Dissipation Pc“800mW ABSOLUTE MAXIMUM RATINGS TA=25*C

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

PCR406

Abstract: PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent
Contextual Info: 芯片型号 典型成品型 号 极 性 HFE MIN HFE MAX HFE IC mA HFE VCE(V) VCESAT(V) MAX VCESAT(V) IC(mA) VCESAT(V) IB(mA) 背面金 属 典型封装形 式 2007NA 2N3904 N 0.2 0.625 65 43 6 80 300 10 1 0.2 10 1 金 TO-92 2007PA 2N3906 P 0.2 0.625 45 43