7TB414A Search Results

KS74AHCT74

Contextual Info: SAMSUNG SEMICONDUCTOR INC OS *7A 1* KS54AHCT KS74AHCT Dual D-Type Positive-Edge-Triggered Flip-Flops with Preset and Clear DESCRIPTION FEATURES ' • Function, pin-out, speed and drive compatibility with S4/74ALS logic family • Low power consumption characteristic of CMOS

Contextual Info: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply

Contextual Info: KM48C2000A, KM48C2100A KM48V2000A, KM48V21OOA CMOS DRAM 2 M x 8 B i t CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

ic KA7812

Abstract: sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815
Contextual Info: KA78XX ELECTRONICS Industria] 3-TERM INAL 1A POSITIVE VOLTAGE REGULATORS The KA78XX series of three-terminal positive regulators are available in the T 0-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current

KM44C256AP

Abstract: samsung hv capacitor KM44C256A-8 KM44C256A KM44C256A-10 KM44C256A-12 KM44C2 262144x4
Contextual Info: SAMSUNG SEMICONDUCTOR INC E3E D 7=1^145 OOOñlbO 7 • KM44C256A CMOS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • • • tcAC •rc 150ns KM44C256A- 8 80ns 20ns

Contextual Info: KM416C1004A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1004A/A-L/A-F is a CMOS high speed 1,048,576 bit x 16 Dynamic Random Access Memory. Its design is optimized fo r high performance

ktk dc drive

Abstract: IRLSZ44A sm 0038
Contextual Info: IRLSZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10|iA Max. @ VDS= 60V

1RF242

Abstract: mosfet IRF240 DIODE M4A irf240 IRF242 1rf240
Contextual Info: \ 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R Tfl DE 17Tbm4S DDOSCm 4 | - — IRF240/241/242/243 IN C 98 D 0 5 0 9 9 D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times