1998 - QUIETIR Series 10ETF10S
Abstract: 10ETF10S 40EPF12 8EWF12S D-PAK package TO-247 10ETF12S diode 35v 10a TO-220AC 30EPF10
Text: New Fast Recovery Diodes in package D-Pak, D 2 Pak, TO-220 & TO-247 QUIETIR Series 1200V, 110ns , * 1.21V 1200 110ns 8EWF12S * 1.21V * 1.25V 110ns 10ETF12S 110ns * 1.25V * 1.25V 110ns 10ETF12 110ns * 1.25V 110ns 1.31V 20ETF12S 1.31V * Preliminary data sheet QUIET IR italic SMALLIR underline Vrr : 200V 110ns 110ns 1.31V 110ns 20ETF12 1.31V 110ns 1.41V 110ns 30EPF12 1.41V 1.25V 110ns 40EPF12 1.4V 110ns 60EPF12
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O-220
O-247
110ns
O-220AC
O-247
8EWF10S
QUIETIR Series 10ETF10S
10ETF10S
40EPF12
8EWF12S
D-PAK package
TO-247
10ETF12S
diode 35v 10a
TO-220AC
30EPF10
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Not Available
Abstract: No abstract text available
Text: 3 0 V QUIET IR Series 1200V, 110ns IF livG , 8A 10A 10A Æ S & P a c k a g e S t y le 20A 20A 30A 40A 60A 80A % ÜPaK 8E W F10S '1 2 1 V 110ns t f- P a k 10ETF10S ` 125V 110ns T 0-22 0A C 10ETFW ' 1.25V · 110ns & 0 2-Pak 2Q E T F 1 Q S 1.31V 110ns M IU-¡¿¿UAO 20E TF10 1.31V 110ns C TO-247 SOEW O TO-247 40E W 0 7.25V JTOns TO-247 60E P F10 14V 110ns # T O -24 7 3pm s S0EPRO V o ita a e G ra d e 1000 I 4 ri/ JlOns t.asv' non* 1200 8E W F12S '1 .2 1 V 110ns
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O-220
O-247
10ETF02S
10ETF04S
20ETF02S
O-22QAC
20ETF02
20ETF04
20ETF06
10ETF02
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MUR1520 equivalent
Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
Text: RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100 RURP8100 1.9V 200ns 1.8V 110ns 1.8V , 90ns 2.1V 90ns 2.1V 90ns 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V , RURG8090 RURU5090 RURU8090 RURP890 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V , RURP880 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V 200ns 1.9V 200ns 1.9V 200ns , RURG8070 RURU5070 RURU8070 RURP870 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V
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5A/80A
MUR1550
RURP3050
RURG3050
RURG5050
RURG8050
RURU5050
RURU8050
RURU10050
RURU15050
MUR1520 equivalent
MUR850
BYW51150
MUR1550
MUR880
MUR1510
MUR810
RURD410
RURD610
RURD610S
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2003 - Not Available
Abstract: No abstract text available
Text: organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) · Fast access time - Random access: 110ns (max , Time 110ns 120ns Time 30ns 50ns 30ns 50ns 70 pin SSOP 70 pin SSOP 70 pin SSOP (pb free) MX23L6422MC-12G 120ns 70 pin SSOP (pb free) MX23L6422MC-11G 110ns PIN CONFIGURATION 70 SSOP A0 A1 A2 A3 A4 A5 , 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal sequential access testing pattern CE = VIH , * MIN. MAX. 110ns 100ns 110ns 30ns 30ns 0ns 20ns 23L6422-12 MIN. MAX. 120ns 120ns 120ns 50ns 50ns 0ns
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
110ns
120ns
MX23L6422MC-12G
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2002 - Not Available
Abstract: No abstract text available
Text: organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) · Fast access time - Random access: 110ns (max , 70 pin SSOP ORDER INFORMATION Part No. Access Page Access Package Time MX23L6422MC-11 110ns , 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal sequential access testing pattern CE = VIH , * MIN. MAX. 110ns 100ns 110ns 30ns 30ns 0ns 20ns 23L6422-12 MIN. MAX. 120ns 120ns 120ns 50ns 50ns 0ns , parameter guaranteed by design over the full voltage and temperature operating range - not tested. * 110ns
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
110ns
MX23L6422MC-12
120ns
SEP/14/1999
DEC/29/1999
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2004 - MX23L6422MC-12G
Abstract: MX23L6422 TSOP 86 Package MX23L6422MC-11 MX23L6422MC-11G MX23L6422MC-12 110ns 4m 32bit mask rom
Text: Random access: 110ns (max.) for 3.135~3.6V 120ns (max.) for 3.0~3.6V - Page access: 30ns (max.) · Page , Access Page Access Package Time Time MX23L6422MC-11 110ns 30ns 70 pin SSOP MX23L6422MC-12 120ns 50ns 70 pin SSOP MX23L6422MC-11G 110ns 30ns 70 pin SSOP (pb free) MX23L6422MC , 10pF Conditions IOH = -0.4mA IOL = 1.6mA 0V, VCC 0V, VCC tRC = 110ns , all output open, with , Address Output High Z Delay tRC tAA tACE tPA tOE tOH tHZ 23L6422-11* MIN. MAX. 110ns
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
MX23L6422MC-11G
MX23L6422MC-12G
MX23L6422
TSOP 86 Package
MX23L6422MC-11
MX23L6422MC-12
110ns
4m 32bit mask rom
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2001 - TSOP 86 Package
Abstract: MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422YC-12
Text: Random access: 110ns (max.) for 3.15~3.6V 120ns (max.) for 3.0~3.6V - Page access: 30ns (max.) · Page , Time Time MX23L6422MC-11 110ns 30ns 70 pin SSOP MX23L6422MC-12 120ns 50ns 70 pin , 110ns , all output open, with normal sequential access testing pattern CE = VIH CE>VCC-0.2V Ta = 25 , 23L6422-11* MIN. MAX. 110ns 100ns 110ns 30ns 30ns 0ns 20ns 23L6422-12 MIN. MAX. 120ns 120ns , not tested. * 110ns for 3.15~3.6V P/N:PM0410 REV. 2.7, OCT. 19, 2001 3 MX23L6422 AC Test
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
MX23L6422YC-12
TSOP 86 Package
MX23L6422
MX23L6422YC-12
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2002 - TSOP 86 Package
Abstract: MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422YC-12
Text: Random access: 110ns (max.) for 3.15~3.6V 120ns (max.) for 3.0~3.6V - Page access: 30ns (max.) · Page , Time Time MX23L6422MC-11 110ns 30ns 70 pin SSOP MX23L6422MC-12 120ns 50ns 70 pin , 110ns , all output open, with normal sequential access testing pattern CE = VIH CE>VCC-0.2V Ta = 25 , 23L6422-11* MIN. MAX. 110ns 100ns 110ns 30ns 30ns 0ns 20ns 23L6422-12 MIN. MAX. 120ns 120ns , not tested. * 110ns for 3.15~3.6V P/N:PM0410 REV. 2.8, MAY 31, 2002 3 MX23L6422 AC Test
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
MX23L6422YC-12
TSOP 86 Package
MX23L6422
MX23L6422YC-12
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2002 - Not Available
Abstract: No abstract text available
Text: - Random access: 110ns (max.) for 3.135~3.6V 120ns (max.) for 3.0~3.6V - Page access: 30ns (max , . Access Page Access Package Time Time MX23L6422MC-11 110ns 30ns 70 pin SSOP MX23L6422MC , , VCC 0V, VCC tRC = 110ns , all output open, with normal sequential access testing pattern CE = VIH , tAA tACE tPA tOE tOH tHZ 23L6422-11* MIN. MAX. 110ns 100ns 110ns 30ns 30ns 0ns 20ns , and temperature operating range - not tested. * 110ns for 3.135~3.6V P/N:PM0410 REV. 2.9, AUG. 07
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422MC-12
MX23L6422YC-12
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15AX2
Abstract: UR1620C RURP880 RURP840CC
Text: 2 1V 90ns IF(AVg>. T j = RURP870CC RURH1570CC 1.8V 110ns 1.8V 125ns RURP880CC RURH1580CC 125ns 1.8V 110ns 1.8V RURP890CC RURH1590CC 1.8V 110ns 1.8V 125ns RURP8100CC RURH15100CC 1.8V 110ns 1.8V 125ns RURP6120CC 2.1 V 90ns t RUR P8120CC 2.1V 110ns T RR at lF = 1A. ITALICS = Future Product O fferings; V
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O-251AA
O-252AA
O-220AB
O-218AC
O-247
15Ax2
30Ax2
RURG3010CC
15AX2
UR1620C
RURP880
RURP840CC
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Not Available
Abstract: No abstract text available
Text: - Random access: 110ns (max.) for 3.15~3.6V 120ns (max.) for 3.0~3.6V - Page access: 30ns (max , 110ns 30ns 70 pin SSOP MX23L6422MC-12 120ns 50ns 70 pin SSOP MX23L6422VC-11 110ns , Conditions IOH = -0.4mA IOL = 1.6mA 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal , . 110ns - 120ns - Address Access Time tAA - 100ns - 120ns Chip Enable Access Time tACE - 110ns - 120ns Page Mode Access Time tPA - 30ns - 50ns
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6P4
JAN/29/1999
APR/09/1999
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Not Available
Abstract: No abstract text available
Text: MX23L3223 32M -B IT M ASK ROM (16/32 BIT OUTPUT) FEATURES · Bit organization - 2M x 16 (word mode) - 1 M x 32 (double word mode) · Fast access time - Random access: 110ns (max.) - Page access: 35ns , 3.6V±0.2V · Package - 70 pin SSOP (500mil) ORDER INFORMATION Part No. Access Time M X23L3223M C-11 110ns , tRC = 110ns , all output open CE = VIH CE>VCC-0.2V Ta = 25°C, f = 1MHZ Ta = 25°C, f = 1MHZ - - , tOH tHZ 23L3223 -11 MIN. 110ns - MAX. - 110ns 110ns 35ns 35ns - - - - 0 ns -
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MX23L3223
110ns
500mil)
X23L3223M
110ns
A0-A19
D0-D30
D31/A-1
PM0467
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1997 - RURU10060
Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
Text: RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns , RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURP8100 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns , RURP890 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V 200ns 1.9V 200ns 1.9V 200ns , RURU8080 RURP880 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V 200ns 1.9V 200ns 1.9V , RURU8070 RURP870 1.8V 110ns 1.8V 125ns 1.8V 150ns 1.8V 150ns 1.9V 200ns 1.9V 200ns 1.9V 200ns 1.9V
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RURP8120
RURP15120
RURP30120
RURG30120
RURG50120
RURG75120
RURU50120
RURU75120
RURU100120
RURU150120
RURU10060
MUR1560
MUR850
MUR850 diode
MUR880E
MUR1510
MUR1515
MUR810
MUR815
RURG3010
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Not Available
Abstract: No abstract text available
Text: organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) · Fast access time - Random access: 110ns (max , -11 MX23L6422VC-11 MX23L6422VC-12 MX23L6422YC-12 Access Time 110ns 110ns 120ns 120ns MX23L6422MC-12 120ns Page , 10pF 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal sequential access testing pattern CE , Output High Z Delay Symbol tRC tAA tACE tPA tOE tOH tHZ 23L6422-11* MIN. 110ns 0ns MAX. 100ns 110ns 30ns , voltage and temperature operating range - not tested. * 110ns for 3.15~3.6V AC Test Conditions Input
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422VC-11
MX23L6422VC-12
MX23L6422YC-12
110ns
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Not Available
Abstract: No abstract text available
Text: organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) ⢠Fast access time - Random access: 110ns , pin TQFP (14mm x 14mm) -86 pinTSOP(2) Access Page Access Time Time MX23L6422MC-11 110ns 30ns M X23L6422MC-12 120ns 50ns MX23L6422VC-11 110ns 30ns MX23L6422VC-12 120ns 50ns MX23L6422YC , Conditions IOH = -0.4mA IOL= 1.6mA 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal sequential , 120ns 120ns 50ns 50ns 20ns MAX. 110ns 0ns - 100ns 110ns 30ns 30ns 0ns 20ns Note
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MX23L6422
64M-BIT
110ns
MX23L6422MC-11
X23L6422MC-12
120ns
MX23L6422VC-11
MX23L6422VC-12
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Not Available
Abstract: No abstract text available
Text: organization - 4M x 16 (byte mode) - 2M x 32 (double word mode) · Fast access time - Random access: 110ns (max , -11 MX23L6422VC-11 MX23L6422VC-12 MX23L6422YC-12 Access Time 110ns 110ns 120ns 120ns MX23L6422MC-12 120ns Page , 10pF 0V, VCC 0V, VCC tRC = 110ns , all output open, with normal sequential access testing pattern CE , Output High Z Delay Symbol tRC tAA tACE tPA tOE tOH tHZ 23L6422-11* MIN. 110ns 0ns MAX. 100ns 110ns 30ns , voltage and temperature operating range - not tested. * 110ns for 3.15~3.6V AC Test Conditions Input
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MX23L6422
64M-BIT
110ns
120ns
MX23L6422MC-11
MX23L6422VC-11
MX23L6422VC-12
MX23L6422YC-12
110ns
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URG 30100
Abstract: rur 450 UR810 IC p815 UR1520 P3020 ruru100 URP1560 RD6120 UR840
Text: P1570 M U R 870E R U R P870 1.8V 110ns 1 .8 V 1 2 5 n s M U R 880E R Ü R P1580 R U R P880 1.8 V 110ns 1 .8 V l2 5 n s M UR890E R U R P1590 R URP890 1.8V 110ns 1 8 V 1 2 5 n s M UR8100E R U R G 5070 1.9V , RURP8100 1 .8V 110ns 1 8 V 1 2 5 n s 1200V 2 0 0 n s 1 .9 V 2 0 0 n s 1.9V 2 0 0 n s 1 .9V R U , V 110ns 2 .1 V 1 3 0 n s 2 .1 V 9 0 n s 2 .1 V 9 0 n s 2 .1 V tj R U R U 1 5 0 12 0 IT A L IC
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O-251
O-252
T0-247
O-218
URD610S
UR810
P3010
RURP3015
P3020
RURP3040
URG 30100
rur 450
IC p815
UR1520
ruru100
URP1560
RD6120
UR840
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2000 - SINGLE LEAD TO-218
Abstract: RHRU100120 RHRP860C Rectifier 1A 1200V RURD420 RURD420S RHRP8120 RURD460S RURD620 RURD660
Text: , RURP15100, RURP30100, 1.8V 125ns 1.8V 150ns RURP8120, RURP15120, RURP30120, 2.1V 110ns RURD660, RURD660S, 1.5V 60ns MUR840, RURP840, 1.3V 60ns MUR8100E, RURP8100, 1.8V 110ns , , RURD460CCS, 1.5V 60ns RURP860CC, 1000V 1200V RURP4120CC 2.1V 90ns RURP8120CC 2.1V 110ns
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O-252
O-251
O-252
O-220AC
RURD420,
RURD420S,
1-888-INTERSIL
RURD840,
RURD840S,
MUR1540,
SINGLE LEAD TO-218
RHRU100120
RHRP860C
Rectifier 1A 1200V
RURD420
RURD420S
RHRP8120
RURD460S
RURD620
RURD660
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Not Available
Abstract: No abstract text available
Text: cycle time (MIN.) MC- 424000AB72-60 60ns 110ns 10.45 W MC- 424000AB72-70 70ns , - 424000LAB72-60 60ns 110ns 70ns 130ns 5.87 w 66.6 mw (CMOS level) 6.52 w MC
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MC-424000AB72,
424000LAB72
72-BIT
MC-424000AB72
MC-424000LAB72
voltage16M
4217400L)
424000AB72-60
110ns
424000AB72-70
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130ns
Abstract: dynamic ram module
Text: (MIN.) 110ns 130ns 150ns 110ns 130ns 150ns Power consumption (MAX.) Active Standby 10.45 w 9.50
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MC-424000AB72,
424000LAB72
72-BIT
MC-424000AB72
MC-424000LAB72
voltage16M
4217400L)
424000AB72-60
424000AB72-70
424000AB72-80
130ns
dynamic ram module
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2000 - MUR840
Abstract: ultrafast recovery dual rectifier RHRP8120 RHRU100120 Hyperfast Diode 1200V RURG8060 smps design 32V MUR1520 MUR820 RURD420
Text: RURU75120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1V 200ns 2.1V 200ns 2.1V 200ns , -251 TO-252* IF(AVG) 1.0V 50ns MUR840 RURP840 1.3V 60ns MUR8100E RURP8100 1.8V 110ns , RURP8120CC 2.1V 110ns RHR1K160D 2.1V 25ns *TO-252 is designated by "S" suffix. NOTE: VF at IF(AVG , 200ns RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 2.1V 110ns 2.1V , 50ns MUR840 RURP840 1.3V 60ns MUR8100E RURP8100 1.8V 110ns RURD460 RURD460S 1.5V 60ns
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FO-011
O-218
O-204AA
O-220
Rating/10
MS012AA
O-262,
O-263
O-264X
MUR840
ultrafast recovery dual rectifier
RHRP8120
RHRU100120
Hyperfast Diode 1200V
RURG8060
smps design 32V
MUR1520
MUR820
RURD420
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Not Available
Abstract: No abstract text available
Text: ADVANCE FLASH MEMORY FEATURES · · · · Sixteen 64KB erase blocks Programmable sector protect Deep Power-Down Mode: lOfiA MAX 3V-only, dual-supply operation: 2.7V to 3.6V Vcc 2.7V to 3.6V or 5V ±10% V pp · Address access times: 90ns, 110ns · Automated write and erase algorithm · Two-cycle WRITE/ERASE sequence · Timing (2.7V-3.6V Vcc) 90ns access 110ns access MT28F008S3 3V Only, Dual Supply (/> m < m z o m m 0 n I> 1 s m 2 OPTIONS MARKING -9 -11 3 jj Package Plastic 40
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110ns
110ns
MT28F008S3
40-lead
MT28F008S3VG-9
MT28F008S3
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Not Available
Abstract: No abstract text available
Text: ADVANCE N E W BO O T BLOCK FLASH MEMORY FLASH MEMORY FEATURES · Twenty-three erase blocks: Two 4K-word boot blocks (protected) Six 4K-word parameter blocks Fifteen 32K-word main memory blocks · Smart 3 voltage flexibility: 2.7V to 3.6V Vcc 2.7V to 3.6V or 12V* V p p · 2.7V or 1.8V I/O » Address access times: 90ns, 110ns , 150ns · WRITE and ERASE SUSPEND · Extended temperature operation (-40°C to , Timing 90ns access 110ns access 150ns access · Boot Block Starting Address Top (7FFFFH) Bottom (00000H
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32K-word
110ns,
150ns
110ns
150ns
00000H)
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Not Available
Abstract: No abstract text available
Text: ADVANCE p ìlC R O M N E W BO O T BLOCK FLASH MEMORY ;Ü iiü U FLASH MEMORY FEATURES · Thirty-nine erase blocks: Two 4K-word boot blocks (protected) Six 4K-word parameter blocks Thirty-one 32K-word main memory blocks · Smart 3 voltage flexibility: 2.7V to 3.6V Vcc 2.7V to 3.6V or 12V* V fp · 2.7V or 1.8V I/O · Address access times: 90ns, 110ns , 150ns · WRITE and ERASE SUSPEND · Extended temperature , Timing 90ns access 110ns access 150ns access · Boot Block Starting Address Top (FFFFFH) Bottom (OOOOOH
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32K-word
110ns,
150ns
MT28F160A3
110ns
150ns
MT28F160A3
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UFRG30120
Abstract: No abstract text available
Text: temperature â¢Vrrm 1200V ⢠Vr = 110ns max. ⢠Low loss, Low noise Electrical Characteristics Average , 'FSM 400 Amps ^FM 1.8 Volts YFM 1.25 Volts 'RM 50UA 'RM 2.0mA Vr 110ns Cj 150 pF TC = 141 °C 8.3ms
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UFRG30120
UFRG301
UFRG30120
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