KSA614 Search Results

Contextual Info: KSA614 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • C ollector-B ase Voltage: V Cb o = -80V • C ollecto r D issipation: PC= 2 5 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F KSA614F Plastic-Encapsulate Transistors TO-220F TRANSISTOR PNP FEATURE y Low Frequency Amplifier y Medium Speed Switching 1. BASE 2. COLLECTOR 3. EMITTE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: KSA614 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Collector-Base Voltage: VC bo= -80V • Collector Dissipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating U nit Collector- Base Voltage C haracteristic VcBO Symbol

KSA614

Contextual Info: KSA614 KSA614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO= -80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA614

Contextual Info: SavantIC Semiconductor Product Specification KSA614 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Collector-Base Voltage:VCBO=-80V Min ·Collector dissipation:PC=25W@TC=25 APPLICATIONS ·Low frequency power amplifier ·Power regulator

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSA614

Contextual Info: Inchange Semiconductor Product Specification KSA614 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Collector-Base Voltage:VCBO=-80V Min ·Collector dissipation:PC=25W@TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator

KSA614

Contextual Info: KSA614 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • C o lle c to r-B a s e V o lta g e : V C b o = -8 0 V • C o lle c to r D is s ip a tio n : P C= 2 5 W T c = 2 5 °C A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r- B a s e V o lta g e

KSA614

Contextual Info: KSA614 KSA614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO= -80V • Collector Dissipation : PC=25W TC=25°C 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

TO220 Semiconductor Packaging

Abstract: DSA00230241
Contextual Info: KSA614 KSA614 Low Frequency Power Amplifier Power Regulator • Collector-Base Voltage : VCBO= -80V • Collector Dissipation : PC=25W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA614

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA614 LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Collector-Base Voltage V Cso= -80V • Collector Dissipation pc=25W Tc= 2 5 f ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage VcB O Sym bol -8 0 V Collector- Emitter Voltage

Contextual Info: KSA614F PNP TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features Low Frequency Amplifier Medium Speed Switching Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

KSD 303

Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series D evice Page Device Page D evice Page KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182

ksa614

Contextual Info: KSA614 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR TO -220 • Collector-Base Voltage V c b o = -80 V • Collector Dissipation PC=2SW Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry