KSA642 Search Results

Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 • Collector-Base Voltage: VCBO= -30V • Low Collector-Emitter Saturation Voltage: VCE sat = -0.15V(TYP) • Complement to KSC184 ABSOLUTE MAXIMUM RATINGS (TA =25°°C) Characteristic

KSA642

Abstract: KSD227
Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Com plem ent to KSD227 • C ollector Dissipation P c =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSD227 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO -92 • Complement to KSA642 • Collector Dissipation Pc =400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KSA642 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Amplifier Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSA642

Contextual Info: KSA642 KSA642 TRANSISTOR PNP FEATURES Power dissipation PD: TO-92 0.4 W (Tamb=25℃) 1. EMITTER Collector current ICM: -0.3 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 2. BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃

KSA642CY

Contextual Info: KSA642 KSA642 Low Frequency Power Amplifier • Complement to KSD227 • Collector Power Dissipation : PC = 400mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

KSD227

Abstract: KSA642
Contextual Info: KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation : PC=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-92 • Com plem ent to KSD227 • Collector Dissipation P c =400mW ABSOLUTE MAXIMUM RATINGS TA =251 C h a ra cte ristic Sym b o l Collector-Base Voltage Collector-Emittef Voltage Emitter-Base Voltage

Contextual Info: KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation : PC=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSD227 LOW FREQUENCY POWER AMPLIFIER • Complement to KSA642 • Collector Dissipation P c=400mW TO-92 ABSOLUTE MAXIMUM RATINGS TA«25TC Sym b o l C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSA642

Abstract: KSD227
Contextual Info: KSD227 KSD227 Low Frequency Power Amplifier • Complement to KSA642 • Collector Power Dissipation : PC=400mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

KSD227

Contextual Info: KSD227 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSA642 • Collector Dissipation PC=400mW TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSD227 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • C om plem ent to KSA642 • C ollector D issipation P c=400m W ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Rating Unit 30 25 V V Col lector-Base Voltage C ollector-E m itter Voltage

KSD 303

Abstract: ksd 180 ksd 168 bd681 9 435 tip bc548 TIP BD140 BC548 ksd 201 ksc5386 KSP20
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series D evice Page Device Page D evice Page KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182

KSD 166

Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220 KSA1241

KSA642

Abstract: KSD227
Contextual Info: KSA642 KSA642 Low Frequency Power Amplifier • Complement to KSD227 • Collector Power Dissipation : PC = 400mW • Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor

MBR1620CT

Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
Contextual Info: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

PNP 2N4403

Abstract: KSC1330 KSC839 KSA928 KSP2222A KSC2882 ksd999
Contextual Info: TRANSISTORS FUNCTION GUIDE TO-92 Type Transistors Continued Condition Device and Polarity NPN KSP6602 2N4401 KSP2222A 2N4400 2N3903 2N3904 KSP20 KSC1330 KSD471A KSD227 KSP5172 KSC184 KSD261 SS9013 MIN 1.2 2.6 1.2 0.95 10 10 20 10 20 50 20 20 20 10 100 200

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM