KSE801 Search Results

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

transistor k 702

Abstract: TRANSISTOR S 802 kse800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

kse800

Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
Contextual Info: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

transistor H 802

Abstract: PC 801 S
Contextual Info: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @ lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

BDX548

Abstract: KSB1023 power BJT MJD117 Darlington bdx33c KSD5018 PNP dpak npn BD675A BD677A KSD1692
Contextual Info: Discrete Power BJT darlington Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSD985 1.5 60 150 8 10 2000 30000 1 - 1.5 KSD986 1.5 80 150 8 10 2000 30000 1 - 1.5 KSD1692 3 100 150 8

transistors mje13005

Abstract: MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A
Contextual Info: Power Transistors Operating Temperature: -65o C to 150o C h FE Part No. and Polarity IC NPN MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A TIP35B TIP35C - PNP MJE4350 MJE4351 MJE4352 MJE4353 MJH6285 MJH6286 MJH6287 TIP36 TIP36A TIP36B

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

ksd 180

Abstract: ksd 180/60 ksd 250 se130 tip142
Contextual Info: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSD201

Abstract: kse800 KS01692 KSE703 KSA1304 KSA1614 KSB1015 KSB1366 KSC3296 KSD1273
Contextual Info: SAMSUNG E L E C T R O N I C S INC bOE D • 7 cíbmM5 TRANSISTORS 2.1.6 0011S3M 67b ■ SMfiK FUNCTION GUIDE T0-220 F Type Transistors Device Type VcEO (A) <V) 1.5 150 3 55 NPN KSC3296 W MIN KSA1304 10 0.5 40 KSA1614 5 0.5 40 PNP Condition *>FE VcE<s«tXV)

SD1406

Abstract: SD2058 KSD201 sb1150 SD-1406
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition

Contextual Info: FUNCTION GUIDE TRANSISTORS 2.1.6 T0-220 F Type Transistors Device Type (A) (V) 1.5 150 3 55 NPN KSC3296 Condition Condition hFE •e V ce (V) (A) M IN KSA1304 10 0.5 40 KSA1614 5 0.5 40 240 PNP M AX lc (A) Ib (A) 75 0.5 0.05 VciKsatKV) TYP Condition M AX

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5

E802

Abstract: KSE800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

ic 803

Abstract: KSE800
Contextual Info: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor

TRANSISTOR S 802

Abstract: KSE800 ic 801
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic

ic 803

Abstract: transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126 Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic