2SD247 Search Results

2SD2470

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value

Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage VCE(sat):0.5V 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm 45° +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 1.5±0.1 45° * 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo

TO-92SP

Abstract: 2SD2470 strobo led TO-92SP-3 QW-R216-003
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible 1 TO-92SP *Pb-free plating product number: 2SD2470L ORDERING INFORMATION

2SD2474

Abstract: 2SB1612
Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SD2470

Abstract: TO92S
Contextual Info: 2SD2470 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features — Low saturation voltage VCE(sat):0.5V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS  FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible  ORDERING INFORMATION Ordering Number Package Lead Free

2F P marking

Abstract: 2SD2474 at maga 2SB1612
Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SB1612

Abstract: 2SD2474
Contextual Info: Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2474 Unit: mm 45° • Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

2SD2479

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification M Di ain sc te on na tin nc ue e/ d 10.8±0.2 • Features • High forward current transfer ratio hFE

2SD2470

Contextual Info: 2SD2142 K / 2SC2062S 2SD2470 Transistors I High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S •F e atu res • A b so lu te maximum rating« (Ta=25°C) 1 ) Darlington connection for a high hre. (Min. 5 0 0 0 at V ce /Ic =3 V /0 .1 A ) 2 ) H igh input im pedance.

smd transistor 2f

Abstract: 2f smd transistor marking 2f 2f npn smd transistor smd 2f 2SD2474 transistor SMD 2f SMD marking 2F Silicon NPN Epitaxial Planar Type 2SD24
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2474 Features Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

c4574

Abstract: 2SD2478 2SC4574 b426 2SB1616
Contextual Info: 2SB1616 2SD2478 Transistors Medium Power Transistor Motor or Relay drive (—80V, —4 A) 2SB1616 •Absolute maximum ratings (Ta=25"C) •Features 1 ) D arlington connection for a high hre. 2 ) Built-in resistor betw een base and emitter. 3 ) Built-in dam per doide.

2SD2478

Abstract: D426 2SB1616 b426 2SB1616 equivalent SPEC-B426
Contextual Info: Transistors 2SB1616 2SD2478 SPEC-B426 (94L-1129-D426) 301

Contextual Info: 2SD2142K / 2SC2062S 2SD2470 Transistors High-gain Amplifier Transistor 32V, 12V 2SD2142K / 2SC2062S I •F e a tu re s 1 ) Darlington connection for a high Fif e . (Min. 5000 atVcE/lc~3V/0.1A) 2 ) High input impedance. •A b s o lu te maximum ratings (Ta—2 5 t )

Contextual Info: Transistors SMD Type Product specification 2SD2474 Features Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25

Contextual Info: UTC 2SD2470 NPN EPITAXIAL SILICON TRANSISTOR Strobo and DC/DC Converters FEATURES *Low saturation voltage VCE sat = 0.25V(typ) at Ic/IB= 3A/0.1A *Collector current of 5A is possible 1 TO-92SP 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

2SD2479

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2479 Silicon NPN epitaxial planar type Unit: mm For low-frequency amplification M Di ain sc te on na tin nc ue e/ d 10.8±0.2 • Features • High forward current transfer ratio hFE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2470 NPN SILICON TRANSISTOR STROBO AND DC/DC CONVERTERS  FEATURES * Low saturation voltage V= 0.25V typ at IC/IB= 3A/0.1A * Collector current of 5A is possible 1 TO-92SP  ORDERING INFORMATION Ordering Number Package

Contextual Info: UTC 2SD2470 NPN EPITAXIAL SILICON TRANSISTOR Strobo and DC/DC Converters FEATURES *Low saturation voltage VCE sat = 0.25V(typ) at Ic/IB= 3A/0.1A *Collector current of 5A is possible 1 TO-92SP 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )

2SD2470

Abstract: 2SD2142K 2SC2062 2SC2062S 2SC20
Contextual Info: Transistors 2SD2142K / 2SC2062S 2SD2470 94L-570-D25 (SPEC-D230) 316