2SD24 Search Results

2SD2499 equivalent

Abstract: 2SD2499
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 Unit in nun H O RIZO NTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V^BO—1500V Low Saturation Voltage : VcE sat = 5V(M ax.)(Ic = 4A, IB = 0.8A) High Speed : tf= 0.3/iS (Typ.) Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 U nit in mm POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE = 800~3200 V qe = 5V, Ic = 0.2A Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.)(Ic = lA, Iß = 10mA) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SB1587

Abstract: audio Darlington 6A 2SD2438
Contextual Info: Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2438 APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2

2SD2494

Abstract: 2SB1625
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1625 APPLICATIONS ・Audio, ・Series regulator ・General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

2sd2401

Abstract: 2SB1570 MT200 package
Contextual Info: Product Specification www.jmnic.com 2SD2401 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB1570 ・DARLINGTON APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SD2495

Abstract: 2SB1626
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1626 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SB1607

Abstract: 2SD2469
Contextual Info: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications

hfe 2500

Abstract: 2SD2453
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD2453 TO-252 Features 6.50 +0.2 5.30-0.2 High forward current transfer ratio hFE. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127

D2461

Abstract: 2SD2461
Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Product specification 2SB1572 Features Low VCE sat : VCE(sat) -0.4 V Complementary to 2SD2403 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage

D2480

Abstract: 2SD2480
Contextual Info: 2SD2480 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2480 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)

D2462

Abstract: 2SB1602 2SD2462
Contextual Info: 2SD2462 東芝トランジスタ シリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)

2Sd2401

Abstract: rl10c 2SB1570
Contextual Info: SavantIC Semiconductor Product Specification 2SD2401 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

2SB1587

Abstract: 2SD2438
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1587 DESCRIPTION •With TO-3PML package ·Complement to type 2SD2438 APPLICATIONS ·Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

2SB1624

Abstract: 2SD2493
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1624 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2493 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

2SD2449

Abstract: 2-21F1A 2SB1594 2sb15
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO

2SD2481

Abstract: 2SD248
Contextual Info: TO SH IBA 2SD2481 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD2481 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS Unit in mm SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS * • High DC Current Gain : Ji f e = 4000 (Min.) • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.)

to223

Contextual Info: 2SD2403Q Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Features D1 A • This transistor is also available in the TO-223 case with the type designation PZT2403 E E1 • NPN Silicon Epitaxial Planar Transistor for

ic nec 2501

Abstract: NEC 2501 2SB1571 2SD2402
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 4.0±0.25

transistor 2sd2499

Abstract: 2SD2499 08af 2SD2499 equivalent
Contextual Info: 2SD2499 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers TO-3PM

2SD2470

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value