2SD2414 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414 SM U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. PO W ER AM PLIFIER APPLICATIONS. • Low Saturation Voltage : V q e (s a t)= 0.5V (M ax.) (at Ic= 4A ) M A X IM U M R ATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2SD2414

Contextual Info: TO SH IBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10.3MAX. • 1.32 Low Saturation Voltage • Vipern •H* z (1 ü V CA/Tp y ì fa f T/^ = A A i

2SD2414

Contextual Info: TO SH IBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2414(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10.3MAX. • 1.32 •H- Low Saturation Voltage • Vipern z (1 ü V CA/Tp y ì fa f T/^ = A A i

2sd241

Contextual Info: TOSHIBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD241 4(SM) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 10 ,3 MAX • Low Saturation Voltage • V n-m • • Vv.ci = 0 fiV Î M - s iy 5 ,0 1 fat T n = Æ A Ï

2SD2414

Contextual Info: Transistors SMD Type Silicon NPN Triple Diffused Type 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2

2SD2414

Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics

2SD2414

Contextual Info: TO SHIBA 2SD2414 SM TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD241 4(SM) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS 1 0 .3 M A X . 1.32 • Low Saturation Voltage •H* : VCE (sat) - °-5 v (Max.) (at Iç; = 4 A)

Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Transistors SMD Type Product specification 2SD2414 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2

2SD2414

Abstract: D2414
Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics

2SD2414

Abstract: D2414
Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: TOSHIBA 2SD2414 SM TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 2 4 1 4 ( S M) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS 1 0 .3 M A X . • 1.32 Low Saturation Voltage : VCE (sat) = 0-5 V (Max.) (at IC = 4 A)

2SD2414

Abstract: 2-10S2A
Contextual Info: 2SD2414 SM TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) High Current Switching Applications Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A) Absolute Maximum Ratings (Ta = 25°C)

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

transistor

Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
Contextual Info: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ