2SA114 Search Results

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

2SA1146

Contextual Info: JMnic Product Specification 2SA1146 Silicon PNP Power Transistors DESCRIPTION ・With TO-3P I package ・High power dissipations APPLICATIONS ・For audio and general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1144

Abstract: 2SC2704 AC46C
Contextual Info: ~si TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DI SCR ET E/ OP TO 2SA1144 DE | t C H 75S0 DODTatiD 3 Jf~ $bt 0726U [Tp- ^ > 3 - / ^ S IL IC O N PNP E P IT A X IA L TYPE (PCT PROCESS) Unit in mm A U D IO F R E Q U E N C Y A M P L I F I E R FEATURES: - ,' . Complementary

2SA1146

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1146 Silicon PNP Pow er Transistors DESCRIPTION • W ith TO-3P l package • High power dissipations APPLICATIONS • For audio and general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter o

2222J

Abstract: 2SC2707 2SA1147
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1147 S ilicon PNP Pow er T ransistors DESCRIPTION • W ith TO-3 package • High power dissipations • Complement to type 2SC2707 APPLICATIONS • For power switching amplifier and general purpose applications

c2705

Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
Contextual Info: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.

2SA1145

Abstract: A1145 Y 2SC2705 A1145
Contextual Info: 2SA1145 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1145 ○ オーディオアンプ励振段増幅用 単位: mm • 高耐圧です。 • ハイファイアンプの励振段に適します。 • コレクタ出力容量が小さい。

2SC2682

Abstract: 2SA1142
Contextual Info: SavantIC Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1142 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION

2SA1141

Abstract: 2sc2681
Contextual Info: SavantIC Semiconductor Product Specification 2SA1141 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency · APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier

Contextual Info: TOSHIBA 2SA1145 2 S A 1 1 45 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 5.1 MAX • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency

2sa1145

Abstract: 2sc2705
Contextual Info: 2SA1145 TO SH IBA 2 S A 1 145 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS 5.1 MAX. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5 pF (Typ.) High Transition Frequency

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SA1142

Abstract: 2SC2682 TRANSISTOR 2SA1142 Q P
Contextual Info: NEC PN P SILICON POWER T R A N S IS T O R ELECTRON DEVICE D E S C R IP T IO N 2SA1142 The 2 S A 1 1 4 2 u designed far use in A u d io frequency power AmpUllar. PACKAGE D DIMENSIONS i n m illim e t e r * in c h e s FEATURES • H .g h v o lia ^ e V C e o > - 1 8 0 V

2SA1142

Abstract: TO-126 2SC2682
Contextual Info: Inchange Semiconductor Product Specification 2SA1142 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2682 APPLICATIONS ·Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION

2sc2705

Contextual Info: T O SH IB A 2SC2705 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2705 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm 5.1 MAX Complementary to 2SA1145. Small Collector Output Capacitance : C0b = 1.8pF (Typ.) High Transition Frequency : ftp = 200MHz (Typ.)

2SC2707

Abstract: 2SA1147
Contextual Info: JMnic Product Specification 2SA1147 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations ・Complement to type 2SC2707 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN

c2705 transistor

Abstract: c2705 C2705 data 2SC2705 C2705 NPN Transistor transistor C2705 2SA1145
Contextual Info: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2SA114

Abstract: 2SC2705
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO FREQUENCY AM PLIFIER APPLICATIONS. • • • Complementary to 2SA1145. Small Collector Output Capacitance : C0b = 1.8pF (Typ.) High Transition Frequency : fr = 200MHz (Typ.) M A X IM U M RATINGS (Ta = 25°C)

2SC2706

Abstract: 2Sa1146 2SA114
Contextual Info: ~5b TOSHIBA -CDISCRETE/OPTO> 9097250 T O S H IB A » F I t O T T E S D DODTEtiB T 5óC C D IS C R E T E /O P T O 07263 7^ ^ ¿3 2SA1146 SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. FEATURES: D 0 z.2 ±az

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

2sc2705 transistor

Abstract: 2SC2705 2SA114 2SA1145
Contextual Info: TO SH IBA 2SC2705 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2705 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SA1145. Small Collector Output Capacitance : C0b = 1.8pF (Typ.) High Transition Frequency : fr[' = 200MHz (Typ.)

2sc2681 transistor

Abstract: 2sc2681 2SA1141
Contextual Info: 2SA1141/2SC2681 ft« » « * }* !!. PNP Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier, High Frequency Power Amplifier o f T A<giv>„ fT —80 M H z N P N , fT = 90 M H z ( P N P ) HMm/ PACKAGE DIMENSIONS oh FE, (Unit : mm)

2sc2681

Abstract: 2SA1141
Contextual Info: SavantIC Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1141 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING