2SB648 Search Results

2SB648

Abstract: 2SB648A Hitachi DSA001650
Contextual Info: 2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB648 2SB648A Unit Collector to base voltage

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

2SB648

Abstract: 2SD663 2SB648A 2SB64 2SB64R
Contextual Info: HITACHI 2SB648, 2SB648A SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SD668/A f! Li. $ PO- C3 1. E :m iiic r 2. C o lle c to r 3. Base P ? m c n ? i-ony ir> m w (JEPEC TO-126 MOO.) M ABSOLUTE M AXIM UM RATINGS <Ta=25°C)

SB648

Abstract: 2SB648
Contextual Info: I HITACHI 2SB648, 2SB648A SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2S0668/A ¿•t m .± . ii.0 + «K5 15,6 i 0.5 i f . l.miftcf I & *V. i îi - 4 - jl "T •<*> , ■* CoHtctor iDsirrtMffW* ¡f>nwn 2310 3 JEDEC TO-126 MOD.

Contextual Info: H ITACH I 2SD668, 2SD668A S IL IC O N N P N E P iT A X IA L LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SB648/A I l il MIS 43.7x07 î4 ; t> \f 15.61 0.5 l?in<ues * ' *.1; x g t . C o iU 'i.3 0 i f S •!<; n s ii:s< - ' 2J Í 0J JEDEC TO-126 MOD.

2sd668

Abstract: 2sd668a hitachi 180 c
Contextual Info: 2SD668,2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline T O -1 2 6 M O D I 1. E m itte r 2. C o lle c to r 3. B a se Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol

2SD668A

Abstract: 2SD668 Hitachi DSA00164
Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit Collector to base voltage

2SB648

Abstract: 2SB648A
Contextual Info: 2SB648, 2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline T O -126 MOD Í | 1. Em itter 2. Collector 3. Base 1 „ ^ 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648

2SD668

Abstract: 2Sd668A
Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD Ì 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit

2SB648

Abstract: 2SB648A
Contextual Info: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD I 1 1 Absolute Maximum Ratings Ta = 1. Emitter 2. Collector 3. Base Qill 25 °C Ratings Item Symbol 2SB648 2SB648A

Contextual Info: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD i 1 1 . Em itter 2. Collector 1 3. Base „ ill 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648

2SD668

Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD668 2SD668A

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD588

Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*

2SB694H

Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669

616A TRANSISTOR

Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry