2SB694H
Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669
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2sd6612sd661a2sd6622sd662b+132sd6632sd6662sd666a2-31a1a2sd6952sb694h2sd7172sd6892sd668a2sb6462sb6782sb6862sd706
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2SD666
Contextual Info: HITACHI 2SD666, 2SD666A sa. ICON NPN EPITAXIAL LOW FR EQ U EN C Y HiGH VOLTAGE AMPUFIHH Cort'pl >mentary pair wish 2S 8646M Kim-ifT " «: i'ár * 35 ( J E DEC TO-9Z MOD. • A BSO LU T E MAXIMUM RATINGS . I , 2VC ) Sym Symbol bol. hem 0 >!l«;u>r jo base voltage
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2sd6662sd666a8646m |
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2SD666
Abstract: 2SD666A 2S8646 2SD66
Contextual Info: HITACHI 2SD666, 2SD666A SILICON NPN EPITAXIAL LOW FREQUENCY K GH VOLTAGE A VI Pl.; r i EH Complomontary p-air v/i1h 2S864fr'A Kl.* “» ~«Ù\ f . q. } — 1 ! * '*v ! l’ irr.ir- 2. CoOfitm X B l* fDi<r<n>iont h irr> JEDEC TO-92 MOD.) MAXIMUM COLLECTOR DISSIPATION
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2sd6662sd666a2s8646/a2s8646+12sd66
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SD588
Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*
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000-5a2sd5602sd57115khz+162sd5862sd7182sd7262sd7272sd7282sd7312sd5882sb6512sb669a2sb618a2sb6412sb6152sb6692sd588a2sb6182sb616 2sd586
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2SB641 r
Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
Contextual Info: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #
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2sb6032sb6052sb6212sb621a+152sb6242sb631-0b6482sd668ao-1262sb648a2sb641 r2sb6412sd6592sd6892sb6782sb647b2sb646a2sb6462sb686
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SD588A
Abstract: 2SD588 2SD587A 2SD78A 2SB504A 2SD587 2SD287A 2SB57A 2SB67A 2SD365A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2sd587a2sd588a2sb546a2sd401a+132sd402a7-c-25x2sd476a2sd666a2sd667a2sd5882sd78a2sb504a2sd5872sd287a2sb57a2sb67a2sd365a
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2SC1957
Abstract: 2SC2407 2SC2101 2SC1943 2SC1914A 2SC1971 2sc2098 2SC2229 2SC2329 2SC3800
Contextual Info: - m « Type No. tt 2SC 1935 Ìd r ìl 2SC 1936 m ir i! 2SC 1937 ̱ il 2 SC 1938 «± a 2SC 1939 • ± il 2SC 1940 < •- a a 2SC 194 ^ b a a sl 2SC 1942 % Manuf. — 2SC 1943 SANYO M £ TOSHIBA H * tSO 1945,. 3 « 2SC2909 tenonin ù O K /ùJIV Jx 2SC1658
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2sc19122sc16582sc19112scz909+122sc22292sd666a2sc1567a2sc19572sc24072sc21012sc19432sc1914a2sc19712sc20982sc23292sc3800
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25c3356
Abstract: 2SC3170 2SD1431 3519A 2SC2376 2SC2553 2sc3153 2sc3743 2SC3303 2SC3477
Contextual Info: - Sí S tt Type No. « £ 2SC 3501 2 SC 3502 ^ = H * SANYO 2SC4161 m NEC 2SC3272 2SC3272 2SC3153 2SC3307 T ZÒU31DZ 2SDÍ430 T 2SC3153 2SD1431 fâ T 2SC3153 2SD1432 2SC3552 2SC3307 2SC2834A 2SC3765 fâ T 2 SC 3510 ÍI 2SC 3511 a ïi 2SC3302 2SC2369 2SC 3512
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zsc41612sc35712sc31702sc3137+122sc34772sc23762sc22582sc3272zsc225825c33562sd14313519a2sc25532sc31532sc37432sc3303
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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hd25/hdhmcs40hl8314ehl8312+16hl8311hlp1000hl7802hl7801hl1221hlp5000ha 12058ha12047ha12038ha1205817812pha 12046ha12026ha1204517815p17808p
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2SB646A
Abstract: 2SA1755 2sc458lg 2SD666 2SC2545, 2SC2546 2SC2547 2sd666a 2SC4366 2SC2610 2SC4648 2SC3521
Contextual Info: SMALL SIGNAL TRANSISTOR iG eneral amplifier CO 8! CM '8 r ^ V > JJisttìg i'P A :M * ñ JIH o 1 8 r >ì 0 :*£ + LTtftBäitfTu'ÄfcVTJ ttft'MMtBftffi' i.stc ) SPL: CO I 04 O* 8 ! Ratings Characteristics hFE Vceo V) te(A) Vce (satKV) max 160 0.1 60 - 200
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2sa13372sa13502sa13742sa1390+162sc33902sc34132sc34702sc35532sc38362sd15042sb646a2sa17552sc458lg2sd6662sc2545, 2sc2546 2sc25472sd666a2sc43662sc26102sc46482sc3521
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2n44012n54012n55512sa1004+162sa10102sa10132sa10152sa10162sa10172sa10192sc3133 cross referencehitachi 2sc281nec d882a564ad1163a2sc1815 cross referencea628akrc1211kra2203nec d288
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