2SA1298 Search Results

2SA1298

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1298 Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. +Û5 2.5 — a 3 FEATURES: . High DC Current Gain : hpE=100~-320 . Low Saturation Voltage : VcE sat =-0-4V(Max.) (Ic=-500mA, lB=-20mA) . Suitable for Driver Stage of Small Motor

2SA1298Y

Contextual Info: MCC 2SA1298-O 2SA1298-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • Power switching application Low frequency power amplifier application

2SC3265-O

Abstract: 2sc3265
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC3265-O 2SC3265-Y Features • Power switching application x Complementary to 2SA1298 x Low frequency power amplifier application

Contextual Info: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4

2SA1298

Contextual Info: MCC 2SA1298-O 2SA1298-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • Power switching application Low frequency power amplifier application

2SA1298

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1298 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 IC =-500 mA, IB =-20 mA 0.55 Low saturation voltage: VCE(sat) = -0.4V(max) +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320 0.4 3 Features 2 +0.1

Contextual Info: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o 2.4 1.3 0.4 0.95 0.95 2.9 1.9 Collector Dissipation:Pc=225mW Tc=25 C

2SA1298

Abstract: 2SC3265
Contextual Info: 2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications • High DC current gain: hFE (1) = 100~320 · Low saturation voltage: VCE (sat) = 0.4 V (max) · Complementary to 2SA1298

2SA1298

Abstract: 2SC3265
Contextual Info: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100~320 · Low saturation voltage: VCE (sat) = −0.4 V (max) · Suitable for driver stage of small motor

Contextual Info: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100 to 320 • Low saturation voltage: VCE (sat) = −0.4 V (max) • Suitable for driver stage of small motor

Contextual Info: TOSHIBA 2SA1298 2 S A 1 298 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION POWER SWITCHING APPLICATIONS + 0.5 High DC Current Gain : hpg = 100~320 Low Saturation Voltage : V qe (sat) = —0-4 V (Max.)

Contextual Info: 2SA1298LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT2SC3265LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector-current:Ic=-500mA High Total Power Dissipation:Pc=225mW 0.4

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SA1298-O 2SA1298-Y Features • Power switching application x Surface Mount SOT-23 Package x Low frequency power amplifier application

Contextual Info: 2SC3265LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4

2SA1298

Abstract: 2SC3265
Contextual Info: 2SA1298 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1298 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • コレクタ･エミッタ間飽和電圧が低い。

2SA1298

Abstract: 2SC3265
Contextual Info: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100~320 • Low saturation voltage: VCE (sat) = −0.4 V (max) • Suitable for driver stage of small motor

2SA1309

Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
Contextual Info: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303

A1298

Abstract: 2SA1298 2SC3265 marking HB
Contextual Info: 2SA1298 TO SH IBA 2 S A 1 298 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATION POWER SWITCHING APPLICATIONS + 0.5 2 .5 -0 .3 4- High DC Current Gain : hjpg —100~320 Low Saturation Voltage : Vç;e (sat) = —0.4 V (Max.)

2SA1298

Abstract: 2SC3265
Contextual Info: 2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications • High DC current gain: hFE = 100~320 • Low saturation voltage: VCE (sat) = −0.4 V (max) • Suitable for driver stage of small motor

25 V 500mA TRANSISTOR SOT23

Abstract: 2SC326
Contextual Info: 2SC3265LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 1 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o 2.4 1.3 0.4 0.95 0.95 2.9 1.9 Collector Dissipation:Pc=225mW Tc=25 C Unit:mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

2SA1298Y

Abstract: SOT-23-hg 2SA1298 2SA1298-O 2SA1298-Y MARKING IY SOT
Contextual Info: 2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Low Frequency Power Amplifier Application  Power Switching Applications

Contextual Info: 2SC2859LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to 2SA1298LT1 1. 1.BASE 2.EMITTER 3.COLLECTOR Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 0.4

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1298 TRANSISTOR PNP SOT–23 FEATURES  Low Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

A1298

Abstract: 2SA1298 2SC3265
Contextual Info: TOSHIBA 2SA1298 2 S A 1 298 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm LO W FREQUENCY PO W ER AM PLIFIER APPLICATION PO W ER SWITCHING APPLICATIONS + 0.5 High DC Current Gain : hjpg = 100~320 Low Saturation Voltage : (sat) = —0.4 V (Max.)