2SA1297 Search Results

2SA1297 Datasheets (15)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SA1297	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	121.78KB	1
2SA1297	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	116.21KB	2
2SA1297	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	40.15KB	1
2SA1297	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.72KB	1
2SA1297	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.27KB	1
2SA1297	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	41.85KB	1
2SA1297	Unknown	Cross Reference Datasheet	Scan	PDF	36.21KB	1
2SA1297	Toshiba	Silicon PNP Epitaxial Type (PCT Process) Transistor	Scan	PDF	178.7KB	3
2SA1297	Toshiba	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)	Scan	PDF	150.5KB	2
2SA1297	Toshiba	PNP transistor	Scan	PDF	178.7KB	3
2SA1297	Toshiba	TO-92 Mini Package Transistors / Junction FETs	Scan	PDF	73.13KB	1
2SA1297-GR	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.27KB	1
2SA1297GR	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF	178.7KB	3
2SA1297-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.27KB	1

2SA1297Y	Toshiba	Silicon PNP Epitaxial Transistor	Scan	PDF	178.69KB	3

2SA1297 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.	OCR Scan	2sa1297 2sc3267 961001eaa2	PDF
A1297 Abstract: 2SA1297 2SC3267 Contextual Info: 2SA1297 TO SH IBA 2 S A 1 297 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V q E (sat)“ —0.5V (Max.) @Iq = —2A Complementary to 2SC3267.	OCR Scan	2sa1297 2sc3267 a1297	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
Contextual Info: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Absolute Maximum Ratings (Ta = 25°C)	Original	2sc3267 2sa1297	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
2SA1309 Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280 Contextual Info: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303	OCR Scan	ta-25cc 2sa1262 2sa1263n 2sa1264n +142sa1265n 2sa1282 2sa1282a 2sa1283 o-92jf 2sa1300 2sa1309 2sa1307 2sc3180n 2sa1286 2sa1295 2sa1285 sa1312 2sc3280	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm PO W ER AM PLIFIER APPLICATIONS PO W ER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297	OCR Scan	2sc3267 2sa1297 961001eaa2	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: TO SH IBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : VCE (sat)“ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.4	OCR Scan	2sc3267 2sa1297 55max	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1297 低周波電力増幅用電力スイッチング用単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
2SC3267 Abstract: 2SA1297 Contextual Info: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)	Original	2sc3267 2sa1297	PDF
Contextual Info: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 SA 1297 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1297) POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V q e (sat)= —0.5V (Max.) @Iq = —2A • Complementary to 2SC3267.	OCR Scan	2sa1297 2sc3267	PDF

Contextual Info: 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3267 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A • Complementary to 2SA1297 Maximum Ratings (Ta = 25°C)	Original	2sc3267 2sa1297	PDF
Contextual Info: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS 4 .2 M A X. • • Low Saturation Voltage : V q e (sat) = 0-5V (Max.) @Iq = 2A Complementary to 2SA1297	OCR Scan	2sc3267 2sa1297 961001eaa2	PDF
A1297 Abstract: 2SA1297 2SC3267 A-1297 Contextual Info: TOSHIBA 2SA1297 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. • • Low Saturation Voltage : V qE (sat)= —0-5V (Max.) @Iq = —2A Complementary to 2SC3267.	OCR Scan	2sa1297 a1297 2sc3267 55max +2961001eaa2 a-1297	PDF
Contextual Info: 2SA1297Y Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2sa1297y freq120m	PDF
Contextual Info: TOSHIBA 2SC3267 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3267 Unit in mm POWER SWICHING APPLICATIONS Û.2MAX. • • Low Saturation Voltage : V q E (sat)~ 0.5V (Max.) @Iq = 2A Complementary to 2SA1297 0.55MAX.	OCR Scan	2sc3267 2sa1297 55max 961001eaa2	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SC3267 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3267 ○ 低周波電力増幅用 ○ 電力スイッチング用単位: mm • 2SA1297 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)	Original	2sc3267 2sa1297	PDF
2SA1297 Abstract: 2SC3267 Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3267. Maximum Ratings (Ta = 25°C)	Original	2sa1297 2sc3267	PDF
Contextual Info: 2SA1297 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2sa1297 freq120m	PDF
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	2n3903 2n3904 2n3905 2n3906 +162n4123 2n4124 2n4125 2n4126 2n4401 2n4402 2n3904 331 transistor c549 transistor 2sk1227 transistor 1201 1203 1205 transistor c549 transistor hand book 2n5551 2sc1815 2sk246 2n4401 331 02cz27 transistor 737	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2sc429gtm 2sc458 2sc458lg 2sc503 +162sc504 2sc510 2sc512 2sc519 2sc520a 2sc594 sn76131 tlo72cp toshiba 2n3055 m53207p 2n3055 toshiba kia7313ap kia7640ap la5530 m5l8155p tbb1458b	PDF

2SA1297 Search Results

2SA1297 Datasheets (15)

2SA1297 Datasheets Context Search

A1297

2SA1297

2SA1297

2SA1297

2SA1297

2SA1309

2SA1297

2SA1297

2SA1297

2SC3267

A1297

2SA1297

2SA1297

2N3904 331 transistor

sn76131