2SA1262 Search Results

2SC3179

Abstract: 2SA1262
Contextual Info: SavantIC Semiconductor Product Specification 2SC3179 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION

2SA1262

Abstract: 2SC3179
Contextual Info: SavantIC Semiconductor Product Specification 2SA1262 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A

Contextual Info: SANKEN ELECTRIC CO LT» 2 D000S3Ô 3 ^ S A K J 3SE D POWER TRANSISTORS Note I2SA TYPE Pc VcBO VCEO V eb o 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 1386A 2SA1488 1488A ( T a = 2 S 'C ) Ic Ib Tj (V) (A) (A) CC) -5 -10 -2 150 150 -160 -160 - 5

transistor pnp 12V 1A Continuous Current Peak 2A

Abstract: 2SA1262 2SC3179
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -2A ·Complement to Type 2SC3179

2SA1262

Abstract: 2SC3179
Contextual Info: 2SA1262 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3179 2SA1262 Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min VCEO –60 VEBO IC 10.2±0.2

2SC3179

Abstract: 2SA1262
Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 ICBO VCEO 60 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE Symbol Conditions 2SC3179 Unit VCB=80V 100max µA VEB=6V 100max µA IC=25mA 60min V VCE=4V, IC=1V 40min IB 1 A VCE(sat) IC=2A, IB=0.2A

Contextual Info: 2SA1262 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

2SA1262

Abstract: 2sc317 2SC3179 2SA1262 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SA1262 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3179 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base

Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7 cici G 7 m DDDD'lDß 17D « S A K J Silicon PNP Epitaxial Planar P 3 3 2SA1262 Application Example : e Outline Drawing 1 .MT-25 T022C> Audio and General Purpose Electrical Characteristics Symbol Absolute M axim um R atings

2SA1309

Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
Contextual Info: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303

Contextual Info: 2SA1262 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3179 Ratings Unit V ICBO VCB=–60V –100max µA V IEBO VEB=–6V –100max µA –6 V V(BR)CEO IC=–25mA –60min V –4 A hFE VCE=–4V, IC=–1A 40min VCEO –60 VEBO IC 10.2±0.2

2SA1262

Abstract: 2SC3179
Contextual Info: JMnic Product Specification 2SA1262 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3179 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline TO-220 and symbol

Contextual Info: , £Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1262 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min.) • Low Collector Saturation Voltage

2SC3179

Abstract: 2SA1262
Contextual Info: Inchange Semiconductor Product Specification 2SC3179 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN DESCRIPTION

equivalent for 2sa1668

Abstract: 2SA1668 equivalent SAC02
Contextual Info: General Purpose Transistors VCBO V V CEO (V) 2SA1667 Type No. –150 –150 2SA1668 –200 –200 2SA1488 –60 –60 2SA1488A –80 –80 2SA1262 –60 –60 2SC4381 150 150 2SC4382 200 200 IC (A) PC (W) Complementary Package 2SC4381 –2 2SC4382 25 FM20 (T0220F)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

RGK 20/1

Abstract: sanken snr sanken power transistor 2SA1216 sac 187 triac motor driver full bridge 10A 2SC3855 SANKEN 2SC3909 Sanken Schottky Diode Mi 15 2SA1494 SANKEN bridge rectifier ic
Contextual Info: DISCRETE DEVICES AMS-174 INTERIM ISSUE Subject to change without notice May 9, 1997 DISCRETE TRANSISTORS, DIODES, and ARRAYS Index to Sanken Electronic Components . page 2 NPN Power Transistors . 4

2SC5487

Abstract: 2sc5586 2SA2003 2Sb1352 2sa2042 PACKAGE MT-200 2SB1686 2SA200 MT-200
Contextual Info: 2-1 Power Transistors 2-1-4 Part No. List of General Purpose Transistors by Part No. VCBO V VCEO(V) Ic(A) PC(W) 2SA1186 –150 –150 –10 100 TO-3P Package LAPT Remarks 2SA1215 –160 –160 –15 150 MT-200 (2-screw mount) LAPT 2SA1216 –180 –180 –17

2SC3213

Abstract: 2SC3170 2SC3159 MP40 2sc3153 2sc3180n 2sc3211 2SC3157 2SA1263N 2SC3175
Contextual Info: - 148 - Ält iàü Jfcfcæfë Ta=25‘ C,*EDtàTc=25,C -6 •V-L /V rrj /ü ; Vc e o (V) 2SC3143 2SC3144 HV SW/LF A =i* 2SC3145 (V) . Pc Pc* (A) (W) (W) 0. 08 n m •C(DC) ICBO (max) ink) VcB (V) 0. 1 0.2 120 (min) hF E 60 180 160 HS Stf/D 70 60 3 1.75

Contextual Info: POWER TRANSISTOR u& & m Ê Ê H M a m * + ;hr I PNP POWER TRANSISTORS Electrical Characteristics at TA = 25°C Absolute Maximum Ratings Type No. It Typ. @IE@VCE MHz (A) (V) Pc (W) VcBO V ceo V EB0 !c !b •cbo Iebo (V) (V) (V) (A) (A) Max 0 VCB (mA) (V)

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for