Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1296 Search Results

    2SA1296 Datasheets (19)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1296
    Transys Electronics Plastic-Encapsulated Transistors Original PDF 61.66KB 1
    2SA1296
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 121.78KB 1
    2SA1296
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 116.22KB 2
    2SA1296
    Unknown Transistor Substitution Data Book 1993 Scan PDF 40.15KB 1
    2SA1296
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 45.72KB 1
    2SA1296
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.27KB 1
    2SA1296
    Unknown Japanese Transistor Cross References (2S) Scan PDF 41.85KB 1
    2SA1296
    Unknown Cross Reference Datasheet Scan PDF 36.21KB 1
    2SA1296
    Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Scan PDF 176.8KB 3
    2SA1296
    Toshiba TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Scan PDF 149.72KB 2
    2SA1296
    Toshiba TO-92 Transistors Scan PDF 60.56KB 1
    2SA1296
    Toshiba PNP transistor Scan PDF 176.8KB 3
    2SA1296-GR
    Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF 225.14KB 3
    2SA1296-GR
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.27KB 1
    2SA1296GR
    Toshiba Silicon PNP Transistors Scan PDF 176.79KB 3
    2SA1296-GR(F)
    Toshiba 2SA1296 - Trans GP BJT PNP 20V 2A 3-Pin TO-92 Original PDF 225.14KB 3
    2SA1296-Y
    Toshiba 2SA1296 - TRANSISTOR 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal Original PDF 225.14KB 3
    2SA1296-Y
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.27KB 1
    2SA1296Y
    Toshiba Silicon PNP Transistors Scan PDF 176.79KB 3

    2SA1296 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original
    2sa12962sc3266sc-43 PDF

    2SC3266

    Abstract: 2SA1296
    Contextual Info: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)


    Original
    2sc32662sa1296sc-43 PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan
    2sa12962sc3266sc-43 PDF

    2SA12

    Abstract: 2SA1296 2SC3266 SA12
    Contextual Info: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.


    OCR Scan
    2sa12962sc3266sc-43961001eaa2+22sa12sa12 PDF

    2SC3266

    Abstract: 2SA1296
    Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original
    2sc32662sa1296sc-43 PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original
    2sa12962sc3266sc-43 PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan
    2sc32662sa1296sc-43961001eaa1 PDF

    2SA1296GR

    Abstract: 2SA1296
    Contextual Info: 2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Saturation Voltage:VCE sat High DC Current Gain G 2SA1296-Y 120~240 Range


    Original
    2sa12962sa1296-y2sa1296-gr18-jan-2011+2-10ma2sa1296gr PDF

    2sc3266

    Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2sc32662sa1296sc-43 PDF

    Contextual Info: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ^ MF mm Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS 5.1 M A X . • • Low Saturation Voltage : V q e ( s a t ) = ^-5V (Max.) (Iç = 2A) Complementary to 2SA1296


    OCR Scan
    2sc32662sa1296 PDF

    Contextual Info: 2SA1296 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2sa1296freq120m PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C)


    Original
    2sa12962sc3266sc-43 PDF

    Contextual Info: TOSHIBA TRANSISTOR. SEM ICO NDU CTO R T O SH IB A TECHNICAL 2 S A 1296 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1296) POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS Low Satu ration Voltage : V q e (s a t)= —0.5 (M ax.) @ I q = —2A


    OCR Scan
    2sa12962sc32662sa1296-2 PDF

    2SA1309

    Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
    Contextual Info: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303


    OCR Scan
    ta-25cc2sa12622sa1263n2sa1264n+142sa1265n2sa12822sa1282a2sa1283o-92jf2sa13002sa13092sa13072sc3180n2sa12862sa12952sa1285sa13122sc3280 PDF

    2SC3266

    Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)


    Original
    2sc32662sa1296sc-43 PDF

    2SA1296

    Contextual Info: 2SA1296 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -2 A Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original
    2sa1296-10ma PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)


    Original
    2sc32662sa1296sc-43 PDF

    2SA1296

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20


    Original
    2sa1296-10ma PDF

    Contextual Info: 2SA1296 T O SH IB A 2 S A 1 296 TO SH IB A TRA N SISTO R PO W ER A M PLIFIER A P P LICA TIO N S SILICO N PNP E P ITA X IA L T Y P E PCT PROCESS U n it in m m PO W ER SW ITCHIN G A PPLICA TIO N S r 0 .4 5 0 55 (V lA X , ! I 4.7 M A X . Low Saturation Voltage : V@e (sat)= -0-5 (Max.) @ Ic= -2 A


    OCR Scan
    2sa12962sc3266 PDF

    2SA1296

    Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1296 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original
    2sa1296-10ma PDF

    2SA1296

    Abstract: 2SC3266
    Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)


    Original
    2sa12962sc3266sc-43 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1296 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Low Saturation Voltage: VCE (sat) z High DC Current Gain 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    2sa1296-10ma PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan
    2n39032n39042n39052n3906+162n41232n41242n41252n41262n44012n44022n3904 331 transistorc549 transistor2sk1227transistor 1201 1203 1205transistor c549transistor hand book2n5551 2sc1815 2sk2462n4401 33102cz27transistor 737 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF