2SC3266 Search Results

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

2SA12

Abstract: 2SA1296 2SC3266 SA12
Contextual Info: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)

2SC3266

Contextual Info: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC3266

Contextual Info: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1296

Abstract: 2SC3266
Contextual Info: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V q ^ ( s a t ) “ 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

2sc3266

Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: TOSHIBA 2SC3266 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ^ MF mm Unit in mm PO W ER AM PLIFER APPLICATIONS PO W ER SWITCHING APPLICATIONS 5.1 M A X . • • Low Saturation Voltage : V q e ( s a t ) = ^-5V (Max.) (Iç = 2A) Complementary to 2SA1296

Contextual Info: 2SC3266 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A · Complementary to 2SC3266. Maximum Ratings (Ta = 25°C)

2SA1296

Abstract: 2SC3266
Contextual Info: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296

2SC3266

Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) • Complementary to 2SA1296 Absolute Maximum Ratings (Ta = 25°C)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)

2SC3266

Abstract: CMA2000 NPN transistor collector base and emitter
Contextual Info: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265