2SD1963 Search Results

2SB1308

Abstract: 2SD1963 T100
Contextual Info: 2SB1308 Transistors Power transistor −50V, −3A 2SB1308 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SD1963. zExternal dimensions (Unit : mm)

2SD1963

Contextual Info: .$/ T ransistors 2SD1963 h -7 > V 7 I 9 w w Epitaxial Planar NPN Silicon Transistor Ü ÎJ i  ïi2 J * lltiÆ l/L o w Freq. Power Amp. ^ h P # 7 7 7 v a ffl/S tr o b o Flash. • W f*\T jS 0 /D im e n s io n s Unit : mm) 1 ) VcE (sat) A ' f t l / 'o V c e (sat)=0.45V (Max.)

TRANSISTOR D401

Abstract: D401 -y 2SD1963 D4011
Contextual Info: h 7 > S' 7 $ /Transistors O “ C m Q A * • ^ w w 2SD1963 it f ^ ^ '> 7 ^ y u - ^ 0 N P N y ,; n > K 7 > y ^ ^ Epitaxial Planar NPN Silicon Transistor fé S â fc ï^ J iflte ffl/L o w Freq. Power Amp. 7 s h P ? K 7 7 7 V j- f f l/S t r o b o Flash. • 51-JB‘T a i a / Dimensions Unit : mm)

Contextual Info: Transistors IC SMD Type Product specification 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO

B204

Abstract: 2SB1308 2SD1963 rohm d204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

BF239

Abstract: 2SD1963 RC244
Contextual Info: SPICE PARAMETER 2SD1963 by ROHM TR Div. * 2SD1963 NPN BJT model * Date: 2006/11/14 .MODEL 2SD1963 NPN + IS=700.00E-15 + BF=239.68 + VAF=3.5571 + IKF=15.353 + ISE=700.00E-15 + NE=1.6035 + BR=88.202 + VAR=100 + IKR=.35583 + ISC=228.00E-12 + NC=1.6682 + NK=.81465

2SD1963

Abstract: 2SB1308 T100 RS Marking
Contextual Info: 2SD1963 Transistors Power transistor 50V, 3A 2SD1963 zFeatures 1) Low saturation voltage, typically VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm)

2SD1963

Abstract: B204 2SB1308 94S-166-B204 D204
Contextual Info: Transistors 2SB1308 2SD1963 94S-166-B204 (94S-342-D204) 290

transistor marking DG

Abstract: 2SD1963 low power TRANSISTOR SMD
Contextual Info: Transistors SMD Type Power Transistor 2SD1963 Features Low saturation voltage. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage

Contextual Info: 2SB1308 2SD1963 Transistors Power Transistor —50V> —3A 2SB1308 •Features •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Low V ce(m i). (M ax. —0.45Vm ax. a t Ic/I b = - 1 . 5 A / —0.15A) 2 ) Excellent DC curre nt gain characteristics. 3 ) C om plem ents the 2S D 1963.

2SA1690

Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
Contextual Info: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427

Wr1c

Contextual Info: 2SB1308 2SD1963 Transistors I Power Transistor — 50V ^ -3 A 2SB1308 •F eatu res 1 ) Low V c E ( sa i). (M a x .— 0.45Vmax. at Icyfe 5— 1.5A/— 0.15A) 2 ) Excellent D C current gain characteristics. 3 ) Complements the 2 S D 1 963. • A b so lu te maximum ratings (T a = 2 5 ‘C )

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2sd198

Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
Contextual Info: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)

2SB1516

Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
Contextual Info: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -

2SB600 NEC

Abstract: 2SD965 2SD966 2SD2061 2SB600 1951b 2sc3677 2SC3421 2SD1483 2sd1944
Contextual Info: - m % tt Type No. 2S0 1951 2SD 1952 ^ 2SD 1953 ^ 2SD 1955 2S0 1956 2SD 1957 2SD 1958 2SD 2SD 2SD 2SD 2 so « 0 S ft Z SANYO 2SDS79 2SD15Z4 * $ TOSHIBA 2SC3266 H ft iL m NEC tL HITACHI 2SC2873 2SD1887 2SC3299 2SD1548 1953 □— A 2SD1145 2SD1628 2SD 1964 .

RT1N241M

Abstract: 2sc3246 2SC4159 4392 DTC143ES 2SC3296 2sc3374 DTC114EU 2sc4368 DTC144EU
Contextual Info: - m £ T y p e No. tt « Manuf. SANYO 2SC 4357 h m ¿ÚUi0¿0 2SC 4359 T 2SC3458 2SC 4351 = m 2SC 4362 = # Hi ^ TOSHIBA B V NEC HITACHI tL £ 2SC 4366 S 4 2SC3661 2SC 4367 a s 2SC3776 2SC 4368 tö T MA T S U S H I T A h m MITSUBISHI □ — A ROHM U N221F

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer