2SB1427 Search Results

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

Contextual Info: 2SB1427 Transistor, PNP Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SB1427; BJ-*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - l A/-50 mA • excellent current-to-gain

Contextual Info: 2SB1427 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, —2A 2SB1427 •F e a tu re « •A b s o lu te maximum ratings (T a = 2 5 t:) 1 ) LowVcE(Mt>. ( T y p .— 0 .5 V a t Ic/ I b = — 1 /— 5 0 m A ) Parameter 2 ) E x c e lle n t D C c u rre n t g a in c h a ra c te ris tic s .

Contextual Info: Product specification 2SB1427 Features Low saturation voltage, typically VCE sat =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage

2SB1427

Abstract: T100
Contextual Info: 2SB1427 Transistors Power transistor −20V, −2A 2SB1427 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE : Max . −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5

marking code MPT3

Abstract: 2SB1427 T100 MPT3 ic T100
Contextual Info: 2SB1427 Transistors Power transistor −20V, −2A 2SB1427 !External dimensions (Units : mm) !Features 1) Low saturation voltage, typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5 1.6

transistor BF 697

Abstract: 3818 bf 697 2SB1427 bf465
Contextual Info: SPICE PARAMETER 2SB1427 by ROHM TR Div. * 2SB1427 PNP BJT model * Date: 2006/11/20 .MODEL 2SB1427 PNP + IS=1.0000E-12 + BF=465.72 + VAF=9.7000 + IKF=2.4524 + ISE=1.0000E-12 + NE=1.9208 + BR=100.88 + VAR=100 + IKR=73.071E-3 + ISC=160.34E-12 + NC=1.7538 + NK=.73634

smd ic marking BJE

Abstract: transistor smd marking BJE 2SB1427
Contextual Info: Transistors SMD Type Power Transistor 2SB1427 Features Low saturation voltage, typically VCE sat =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO

Contextual Info: 2SB1427 2SD2153 Transistors I Power Transistor 20V, — 2A 2SB1427 •F e atu res 1) • A b so lu te maximum rating« (Ta=25C} L a w Vce(Mt). (T y p . — 0 . 5 V at lc / t e = — 1/— 5 0 m A ) Parameter Collector-base voltage Collector-emitter voltage

2SB1427

Abstract: T100
Contextual Info: 2SB1427 Transistors Power transistor −20V, −2A 2SB1427 !External dimensions (Units : mm) !Features 1) Low saturation voltage, typically VCE(sat) = −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5 1.6

Contextual Info: 2SB1427 Transistors Power transistor −20V, −2A 2SB1427 zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE : Max . −0.5V at IC/IB = −1A / −50mA. 2) Excellent DC current gain characteristics. 4.0 1.5 0.4 1.0 2.5 1.6 0.5 4.5

2SD2153

Abstract: 2SB1427
Contextual Info: Transistors 2SB1427 2SD2153 96-148-B24TJR (96-239-D24TJR) 284

2SA1690

Abstract: BCX53 Rohm RXT-A28 2SD2170 2SB1132 2SB1181 2SB1182 2SB1184 2SB1188 2SB1189
Contextual Info: R OH M ESE D CORP Tr • ?Ö 2Ö^ GOGEÒ^ fl ■ T - A l ’ Ol Transistors- • MPT SOT-89 , OPT (DPAK) Types Ty 3 6 MPT 2SB1132 — — Driver — 2SD1760 2SD17S8 — 2S01733 2SD1918 2SD2126 2SD2167 2SB1424 2SD2150 2SB1308 2SB1386 2SD1963 2SD2Q98 2SB1427

Contextual Info: 2SB1427 7. $ / I ransistors S7 > v % I $ * y T u7“b “ t PNP V 1J □ > S 7 > V X $ Epitaxial Planar PNP Silicon Transistor Ü ffl/L o w Freq. Power Amp. 2SB1427 • /Dim ensions Unit : mm) 1 ) V c E ls a t)* ' ^ '» l.6±0.l r i -rr-i V C E ( s a t ) = - 0 .5 V (Max.)

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

rkm 33 transistor

Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
Contextual Info: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

2sd198

Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
Contextual Info: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)

2SB1516

Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
Contextual Info: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -