MPT3 Search Results

Contextual Info: 2SAR544P / 2SAR544D Datasheet PNP -2.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -2.5A MPT3 Collector CPT3 Base Collector Emitter Base Emitter 2SAR544P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR544P / 2SCR544D

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

2SCR514p

Contextual Info: 2SAR514P Datasheet PNP -0.7A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -0.7A MPT3 Base Collector Emitter 2SAR514P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR514P 3) Low VCE(sat)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

Contextual Info: 2SCR553P Datasheet NPN 2.0A 50V Middle Power Transistor lOutline Parameter Value VCEO IC 50V 2.0A MPT3 Base Collector Emitter 2SCR553P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR553P 3) Low VCE(sat) VCE(sat)=0.35V(Max.)

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

RJP020N06

Abstract: T100
Contextual Info: RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm MPT3 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Gate zApplications Switching (2)Drain (3)Source Abbreviated symbol : LS zInner circuit

mosfet 1412

Abstract: RHP030N03 T100
Contextual Info: RHP030N03 Transistors 4V Drive Nch MOSFET RHP030N03 zStructure Silicon N-channel MOSFET zDimensions Unit : mm MPT3 1.5 2.5 4.0 zFeatures 1) Low On-resistance. 2) 4V drive. 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 (1)Gate zApplications Switching 1.5 3.0 (2)Drain

Transistor MARKING CODE AW SOT89

Abstract: Transistor marking 0.5 sot-89 MARKING CODE 4A transistors 2sd 2SD2153 T100 Transistor MARKING CODE AW SOT-89 oc sc62
Contextual Info: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DIM-*, where ★ is hFE code 2SD2153 (MPT3) 1.6 * 0 1 ?T. zH . it sf • excellent current-to-gain characteristics • low collector saturation voltage,

transistor fn 155

Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

2SC5053

Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Contextual Info: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate

2SD1862

Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3

RHP020N06

Abstract: T100
Contextual Info: 4V Drive Nch MOSFET RHP020N06 zDimensions Unit : mm zStructure Silicon N-channel MOSFET MPT3 1.5 2.5 4.0 zFeatures 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Gate (2)Drain zApplications

Contextual Info: RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure Silicon N-channel MOS FET External dimensions Unit : mm MPT3 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Gate Applications Switching (2)Drain (3)Source Packaging specifications Abbreviated symbol : LS

Contextual Info: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89

Contextual Info: Medium Power Transistors −30V / −2A 2SAR512P Structure PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT3 Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) (1) (2) (3) 2) High speed switching

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 !External dimensions (Units : mm) MPT3 4.0 2.5 0.5 (1) 0.5 3.0 1.5 0.4 1.0 (2) 1.6 4.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A)

2SD1758

Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
Contextual Info: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5

113 marking code transistor ROHM

Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
Contextual Info: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.

Contextual Info: 4V Drive Nch MOSFET RHP020N06 zStructure Silicon N-channel MOSFET zDimensions Unit : mm MPT3 1.5 2.5 4.0 zFeatures 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. 0.5 4.5 1.6 (2) (3) 1.0 (1) 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Gate (2)Drain zApplications