2SA2071 Search Results

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: Transistors SMD Type PNP Transistors 2SA2071 • Features ● High speed switching. Tf : Typ. : 20ns at IC = - 3A ● Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A) ● Strong discharge power for inductive load and capacitance load.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 !External dimensions (Units : mm) MPT3 4.0 2.5 0.5 (1) 0.5 3.0 1.5 0.4 1.0 (2) 1.6 4.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A)

2SA2071

Abstract: Q2SA2071
Contextual Info: SPICE PARAMETER 2SA2071 by ROHM TR Div. * 2SA2071 PNP BJT model * Date: 06/11/27 .MODEL 2SA2071 PNP + IS=700.00E-15 + BF=192.39 + VAF=100 + IKF=6.8965 + ISE=700.00E-15 + NE=1.7521 + BR=24.020 + VAR=100 + IKR=32.385E-3 + ISC=57.252E-12 + NC=1.4443 + NK=.76838

Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

Contextual Info: Power transistor 60V, 3A 2SA2071 Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2A) 3) Strong discharge power for inductive load and capacitance load.

2SA20

Abstract: 2SA2071 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 !External dimensions (Units : mm) MPT3 4.0 2.5 0.5 (1) 0.5 3.0 1.5 0.4 1.0 (2) 1.6 4.5 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A)

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SA2071 Transistor Power transistor −60V, −3A 2SA2071 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 20ns at IC = −3A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and

Contextual Info: 2SA2071 / 2SA2072 Datasheet PNP -3.0A -60V Middle Power Transistor Outline Parameter Value VCEO IC 60V 3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825

2SC5824

Contextual Info: Power transistor 60V, 3A 2SC5824 Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071.

Contextual Info: Product specification 2SA2071 • Features ● High speed switching. Tf : Typ. : 20ns at IC = - 3A ● Low saturation voltage, typically (Typ. : -2 00mV at IC = -2A, IB = -0.2A) ● Strong discharge power for inductive load and capacitance load. ■ Absolute Maximum Ratings Ta = 25℃

2SA20

Abstract: MP6Z3
Contextual Info: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

2SA2071

Abstract: 2SC5824 T100
Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5

2SA20

Contextual Info: MP6T3 Transistors Medium Power Transistor −60V, −3A MP6T3 zFeatures 1) High speed switching. (tf : Typ. : 20ns at Ic= −3A) 2) Low saturation voltage, typically (Typ. : −200mV at Ic = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and

2SA2160

Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series

Contextual Info: MP6Z3 Transistors Medium Power Transistor 60V, 3A MP6Z3 zFeatures 1) High speed switching. (tf : Typ. : 30ns at Ic= 3A) 2) Low saturation voltage, typically (Typ. : 200mV at Ic = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

pioneer mosfet audio amp ic

Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great

2SC6144

Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Contextual Info: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.

2SA2071

Abstract: 2SC5824 T100
Contextual Info: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability