2SD1664 Search Results

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

2SD1664

Abstract: 4250 transistor
Contextual Info: 2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W Tamb= 25 C e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664 T100 rohm 2sd1664
Contextual Info: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗

p64 transistor

Abstract: 2SD1664PT 2SD1664P
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SD1664

Contextual Info: Is ~7 > V 7 . $ /Transistors 2SD1664 2SD1664 • 1 ^ 7 NPN \> b ~ 7 > V * $ Epitaxial Planar NPN Silicon Transistor 4 lM :friSlIIffl/M e d iu m Power Amp. • Wfê'+SÉlII/DiiTiensions Unit : mm w * 1) P c = 2 W r * 5 (4 0 X 4 0 X 0 .7 m m -tr =j 2) Low

2SD1664

Contextual Info: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: 2SD1664 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER

Contextual Info: Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 Dimensions (Unit : mm) 2SD1664 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 3.0 + − 0.2 0.4+0.1 −0.05 0.65Max. 0.4 + − 0.1 1.5 + − 0.1 0.5 + − 0.1 (1) (2) (3) 2.54 2.54 Abbreviated symbol: DA∗

Contextual Info: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage

2SD1664

Abstract: Marking TRANSISTOR 232
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,

2SD1664

Abstract: 2SB1132
Contextual Info: UTC 2SD1664 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. 1 FEATURES *Low VCE sat : VCE (sat)= 0.15V(Typ) (Ic/IB= 500mA/50mA) *Complement the 2SB1132. SOT-89 1:EMITTER

2SD1664

Abstract: 3933
Contextual Info: SPICE PARAMETER 2SD1664 by ROHM TR Div. * 2SD1664 NPN BJT model * Date: 2006/11/15 .MODEL 2SD1664 NPN + IS=82.625E-15 + BF=169.40 + VAF=100 + IKF=9.9578 + ISE=82.625E-15 + NE=1.3933 + BR=12.165 + VAR=100 + IKR=14.121 + ISC=202.30E-15 + NC=2.6727 + RE=.1

Contextual Info: Medium Power Transistor -32V, -1A MP6Z1 Dimensions (Unit : mm) Applications Low frequency amplifier MPT6 Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. (6) (5) (4)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER

2sd1664

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD1664 Features • • • • • • Complements to 2SB1132 Low collector-to-emitter saturation voltage.

2SD1664

Abstract: sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1132

Abstract: 2SD1664
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA z Compliments 2SD1664 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

marking 2sd1664

Contextual Info: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO

2SD1858

Abstract: 2SB1132 2SB1237 2SD1664
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

Contextual Info: MP6Z1 Transistors Medium Power Transistor -32V, -1A MP6Z1 zApplications Low frequency amplifier zDimensions (Unit : mm) MPT6 zFeatures 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC /IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package.