2SB123 Search Results

2SB1230

Abstract: 2SD1840
Contextual Info: JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching

2SB1235

Abstract: sanyo 2033
Contextual Info: Ordering number:EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. unit:mm 2033 [2SB1235/2SD1852]

2SB1230

Abstract: 2SD1840
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1230 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 APPLICATIONS

2SD1841

Abstract: 2SB1231
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1231 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 APPLICATIONS

2SB1233

Abstract: 2SB1233A
Contextual Info: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)

2sb1237

Contextual Info: ROHM 4GE CO L T D D • TflS ûW |Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm

2SB12

Abstract: 2SB1231 2SD1841 5SB12
Contextual Info: [^O rd e ring n u m b e r: E N 3260A 2SB1231/2SD1841 2SB1231 : PNP Epitaxial P lanar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. •Low s aturation voltage.

2SD1918

Contextual Info: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1

Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SB1237

Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
Contextual Info: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

2SB1236

Abstract: 2SD1857 transistor 120v
Contextual Info: 2SB1236 Transistors Power Transistor -120V, - 1 ,5A 2SB1236 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = -1 20V) 2) Low collector output capacitance. (Typ. 30pF at V cb = - 1 0V) D 3) High transition frequency, (fr = 50MHz)

4k resistor

Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2Sb1238

Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

transistor 2SB1236

Abstract: 2SB1236 2SD1857
Contextual Info: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)

transistor Ic 1A datasheet NPN

Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Contextual Info: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor

2SB1183

Abstract: 2SB1239 2SD1759 2SD1861 T146
Contextual Info: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.

2SD1841

Contextual Info: Ordering number:ENN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other

Contextual Info: h ~p > y X $ / I ransistors 2 S B 9 1 O M 3 8 2 2SB910M/2SB1238 v = r > 's 7 ,j? ^p'tax'a* Planar PNP Silicon Transistors i ’^ ^ J ii'llffl/M e d iu m Power Amp. • 1 Pc = 1 W 0 /D im e n s io n s U n it: mm) t * it 'o 2 )S W IE , VCeo = - 80V, lc = - 0 . 7 A

Contextual Info: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2

Contextual Info: h 7 > y 7 $ /T ra n s is to rs 2SB1076M /2SB1239 2SB1076M 2SB1239 • « ft 1 ? - < J > H il5 B ^ 3 ii,lliffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistors h > i i ^ T S h FE T '< fe S „ 2) B E P n 1 i;:ftj4 k O < D jftJ 5 i£ rtiK o

Contextual Info: Ordering number:ENN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. · Ultrasmall-sized package permitting sets to be made

BF752

Abstract: transistor BF 199 2SB1236
Contextual Info: SPICE PARAMETER 2SB1236 by ROHM TR Div. * 2SB1236 PNP BJT model * Date: 2006/11/20 .MODEL 2SB1236 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797

Contextual Info: MGE 3 ROHM CO LTD B 7ÖSÖcm 00D553h T HRHM h 7 > y ^ ^/T ransistors 2SB1076M/2SB1239 — 2 S S 1076PÜ 2 S B 1239 — — “ — “ " " 7 ^ 2 7 -2 3 -< J> h > 1&IÜ Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistors • ÿi-JfÎThJÜI/Dimensions Unit : mm