2SB12 Search Results

TRANSISTOR SMD 1a 9

Abstract: 2SB1275 50MHZ
Contextual Info: Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency. fT = 50MHZ +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2SB1205

Abstract: strobe ic 555
Contextual Info: Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1

2SD1913

Abstract: 2SB1274
Contextual Info: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS

2SD1832

Abstract: 2SB1292
Contextual Info: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation

2SB1230

Abstract: 2SD1840
Contextual Info: JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching

2SB1258

Abstract: 2SD1785
Contextual Info: JMnic Product Specification 2SB1258 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1785 ・High DC current gain ・DARLINGTON APPLICATIONS ・Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION

2SB1255

Abstract: 2SD1895
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION ・With TO-3PFa package ・Optimum for 90W Hi-Fi output ・High foward current transfer ratio hFE ・Low collector-emitter saturation voltage ・Complement to type 2SD1895

D1816

Contextual Info: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.

2SB1254

Abstract: 2SD1894
Contextual Info: Product Specification www.jmnic.com 2SD1894 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Optimum for 60W HiFi output ・High foward current transfer ratio ・Low collector saturation voltage ・Complement to type 2SB1254 APPLICATIONS

JL-01

Abstract: 2SB123 2SB1233 2SB1233A panasonic 2SB
Contextual Info: Power T ransistors 2 S 1 B S ilicon 2 3 PN P 3 2 , 2SB12 3 3 , 2S B 1233A S B 1 2 3 3 A E p itaxial P la n a r T yp e P ackage Dim ensions P&wer Am plifier U n it : mn • F eatures *4 3.2m ax. II ■ Absolute M axim um Ratings T c = 2 5 °C Collectorbase voltage

2SB1252

Abstract: 2SD1895
Contextual Info: P o w er T ra n s is to rs 2SD1895 2SD1895 Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB1252 U nit ! mm 5.2max. 1 5 .5 m a x . • Features <z> • O ptim u m for 90W hi-fi o u tp u t

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

SMD BR 08

Abstract: 2SB1203
Contextual Info: Transistors SMD Type High-Current Switching Applications 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max

2SB1218

Abstract: 2SB1218 equivalent smd BQ BS-B
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage

2SB1225

Abstract: 2SD1827
Contextual Info: Inchange Semiconductor Product Specification 2SB1225 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1827 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS

2SB1226

Abstract: 2SD1828
Contextual Info: Inchange Semiconductor Product Specification 2SB1226 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1828 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Motor drivers,printer hammer drivers,relay

Contextual Info: Product specification 2SB1219 Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5

Contextual Info: Product specification 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

ic sc 4145

Abstract: 2SD1816S-E
Contextual Info: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

2SB1299

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SB1235

Abstract: sanyo 2033
Contextual Info: Ordering number:EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. unit:mm 2033 [2SB1235/2SD1852]