2SB121 Search Results

D1816

Contextual Info: Ordering number : EN 254ÛA 2SB1216/2SD1816 N 0.254OA SAiYO PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1218

Abstract: 2SB1218 equivalent smd BQ BS-B
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -45 V Collector-emitter voltage

Contextual Info: Product specification 2SB1219 Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5

ic sc 4145

Abstract: 2SD1816S-E
Contextual Info: Ordering number : EN2540B 2SB1216/2SD1816 Bipolar Transistor http://onsemi.com – 100V, (–)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1219A

Abstract: 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5˚

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planar type 0.425 Unit: mm For general amplification Complementary to 2SB1219 and 2SB1219A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low collector to emitter saturation voltage VCE(sat)

2SB1218A

Abstract: 2SD1819A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219A • Features  Package  Low collector-emitter saturation voltage VCE(sat)  S-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planar type (0.425) Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 5°

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SD1819G • Features ue pl d in an c se ed lud pl vi an m m es

2SB1218A

Abstract: 2SD1819A
Contextual Info: Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A Unit: mm 2.1±0.1 • Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and

2SB1218AW

Abstract: 2SD1819A marking BQ 4
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High forward current transfer ratio hFE z Excellent HFE Linearity. z Complements the 2SD1819A. 2SB1218AW Pb Lead-free APPLICATIONS z For general purpose amplification.

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type 0.425 Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Large collector current IC • S-mini type package, allowing downsizing of the equipment and

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: Transistor 2SD1820, 2SD1820A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB1219 and 2SB1219A Unit: mm • Features Collector to 2SD1820 30 VCBO 25 VEBO 5 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation

2SD1815

Abstract: 2044B 2SB1215 2SD181
Contextual Info: Ordering number:ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2539a

Abstract: 2SD1815 2SB1215 .2539a 2044B ITR09233 ITR09234 1212SD
Contextual Info: 注文コード No. N 2 5 3 9 B 2SB1215/2SD1815 No. N 2 5 3 9 B 41000 半導体ニューズ No.2539 ’ 91 大信号トランジスタ Vol.1 編データブック No.2539A とさしかえてください。 2SB1215 / 2SD1815 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ

L5A relay

Abstract: lm 257 st 2SD181 2539B
Contextual Info: Ordering num ber: EN2539B 2SB1215/2SD1815 N0.2539B PNP/N PN E pitaxial P lan a r Silicon T ransistors SA \ YO High-Current Switching Applications A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current

2SB1218G

Abstract: 2SD1819G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1218G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819G • Features ■ Package • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and

2SB1219

Abstract: 2SB1219A 2SB1219G 2SD1820G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1219G Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1820G • Features ■ Package • Large collector current IC • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

2SD1819G

Abstract: 2SB1218G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1819G Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1218G • Features ■ Package • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

2SB1219

Abstract: 2SB1219A 2SD1820 2SD1820A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1820, 2SD1820A Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1219 and 2SB1219A (0.425) Unit: mm 0.3+0.1 –0.0 • Features • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation 150 PCM: 1.25±0.05 1.01 REF 3. COLLECTOR mW (Tamb=25℃) 0.30 1.30±0.03 Collector current