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E00037
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Arduino
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Evaluation Boards - Embedded - MCU, DSP, Programmers, Development Systems, BOARD MCU INTEL GALILEO |
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PDF
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13 |
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E00135AE
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Panasonic
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TopView Chip LED |
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109.09KB |
2 |
VSE004N04MS
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VANGUARD
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40V/48A N-Channel Advanced Power MOSFET with RDS(on) of 4 mΩ at VGS=10V, available in PDFN3333 package, designed for high-efficiency power applications. |
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VSE002N03MS-G
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VANGUARD
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30V/155A N-Channel Advanced Power MOSFET with RDS(on) of 1.4 mΩ at VGS=10V, 2.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high efficiency, fast switching, and low on-resistance. |
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VSE003N04MSC-G
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VANGUARD
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40V/100A N-Channel Advanced Power MOSFET with typical RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and 100% avalanche testing capability. |
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VSE003N04MS-G
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VANGUARD
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40V/112A N-Channel Advanced Power MOSFET with low RDS(on) of 1.6 mΩ at VGS=10V, available in PDFN3333 package, designed for high efficiency power applications. |
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VSE005N03MS
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VANGUARD
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30V/78A N-Channel Advanced Power MOSFET with 2.8 mΩ RDS(on) at VGS=10V, 4.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high pulse current capability and low gate charge for fast switching applications. |
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SH367103X/016XY-AAE00
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Sinowealth Electronic Ltd
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3/4 series lithium battery pack protection IC with integrated N-MOSFET driver, 3V to 26V operating voltage, overcharge and overdischarge protection, dual discharge current monitoring, short circuit and temperature protection, and low power consumption down to 4uA in sleep mode. |
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VSE008NE2LS
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VANGUARD
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25V/55A N-Channel Advanced Power MOSFET with RDS(on) of 5.8 mΩ at VGS=10V, 6.6 mΩ at VGS=4.5V, available in PDFN3333 package, suitable for 3.3V logic level control and high-efficiency switching applications. |
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VSE008N03LS
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VANGUARD
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30V/42A N-Channel Advanced Power MOSFET with 10 mΩ RDS(on) at VGS=10V, available in PDFN3333 package, featuring low on-resistance, fast switching, and avalanche ruggedness. |
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VSE006N03MSC-G
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VANGUARD
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30V/36A N-Channel Advanced Power MOSFET with 4.2 mΩ RDS(on) at VGS=10V, 7.3 mΩ at VGS=4.5V, 48A silicon-limited current, and 192A pulse current capability in a PDFN3333 package. |
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VSE007N04MS-G
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VANGUARD
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40V/75A N-Channel Advanced Power MOSFET with typical RDS(on) of 3.2 mOhm at VGS=10V and 4.9 mOhm at VGS=4.5V, available in PDFN3333 package. |
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VSE004N04MS
