2SD1662 Search Results

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

SC-62

Abstract: 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 2SD1668 2SD1669
Contextual Info: - 260 - Ta=25<C , *EPfàTc=25‘ C m 2SD1662 2SD1663 2SD1664 2SD1665AM 2SD1665M 2SD1666 2SD1667 s tt j s s fô T O—A n —A D —A 3$ rn « Œ VCBO «CEO (V) (V) PSW 100 PSW 1500 100 Pc Pc* (A) (W) (W) »CBO unax; UA) 100 15 5 n m « ÌC(DC) , V'CB (V)

Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

2SD1662

Contextual Info: TO SHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 662 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 53.2 ±0.2 15.9MAX • High DC Current Gain : hjrß = 1000 (Min.) • Low Collector Saturation Voltage iS# : v CE(sat) = 1-s v (Max.)

Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

2SD1662

Contextual Info: TO SH IBA 2SD1662 2 S D 1 662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH CURRENT SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 1000 (Min.) Low Collector Saturation Voltage : VCE (sat)“ ±-ov uviaxj Monolithic Construction with Built-In Base-Emitter Shunt

Contextual Info: TOSHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D1 6 6 2 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 1 5.9M A X • High DC Current Gain : hjrg —1000 (Min.) • Low Collector Saturation Voltage S53 2 + 0.2 : VCE(sat) = 1*5V (Max-)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD1662 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 5 9 MAX. FEATURES: 03,Z±O.Z I . High DC Current Gain T. i/ ^ O : hFE=1000(Min.) (VCE=3V, IC=15A) . Low Collector Saturation Voltage

d1662

Abstract: 2SD1662 D-1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1662 High Current Switching Applications Unit: mm • High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1662 ○ 大電流スイッチング用 単位: mm • 直流電流増幅率が高い。 • コレクタ飽和電圧が低い。 : VCE (sat) = 1.5 V (最大) (IC = 15 A)

D1662

Abstract: 2SD1662
Contextual Info: 2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1662 High Current Switching Applications • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) • Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15 A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1662 INDUSTRIAL APPLICATIONS Unit in nun HIGH CURRENT SWITCHING APPLICATIONS. 1 Si9MAX. 0 S . Z ± O l Z FEATURES: . High DC Current Gain : h FE-1000 Min. (VC e -3V, Ic = 15A) . Low Collector Saturation Voltage : V C E(sat)=1.5V(Max.)

2SD1662

Contextual Info: TO SH IBA 2SD1662 2 S D 1 662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH CURRENT SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 1000 (Min.) Low Collector Saturation Voltage : VCE (sat)“ ±-ov uviaxj Monolithic Construction with Built-In Base-Emitter Shunt

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs