2SD1406 Search Results

2SB1015

Abstract: IC 4025
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406

2SD1406

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,

2SB1015

Abstract: 2sB1015 y 2SD1406
Contextual Info: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

2SB1015

Abstract: 2SD1406
Contextual Info: SavantIC Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier

2SD1406

Abstract: 2SB1015 RL15A
Contextual Info: SavantIC Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 · APPLICATIONS ·For audio frequency power

Contextual Info: TOSHIBA íDI SC RE TE /O PT O} 9097250 TO SH IBA lib C D ISCRETE/OPTO * -3 t>U~üT9~¿Tr ' 2SD1406 DE I TDTTaSO □□□ 7141 S I 3 ^ — 0 «jf U SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm IQ 3MAX, FEATURES:

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

te 1819

Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =

2sb1015

Abstract: transistor 2sb1015 2SD1406 transistor 2sd1406
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1015 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -1.7 V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1406 APPLICATIONS ·Designed for audio frequency power amplifier applications.

2SD1406

Abstract: 2SB1015 25WTc
Contextual Info: Inchange Semiconductor Product Specification 2SD1406 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : hpj;=300 Max. (Vç e =5V, Ic~0.5A) . Low Saturation Voltage : VC E (sat) = 1 •OV(Max.)(IC=3A, IB=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C)

2SD1406

Abstract: 2SB1015 H7250
Contextual Info: TOSHIBA lib {DISCRETE/OPTO} 9 0 9 7 2 5 0 T O S H I B A ‘ t>bC~"U7 9 4 r CD IS C R E T E / O P T O 2SD1406 DE I T D T T E S O O G D ? ^ ! D T ' 3 B ~ ö 9 SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm I Q 3 MAX,

2SB1015

Abstract: 2SD1406 2SB1015-O 2sB101
Contextual Info: V U = ¡> P N P = n íÉ ñ M 2SB1015 2SB1015 : mm 10.3MAX. lâfnsrtTi'i&v'o : V C E (sat) = —1.7V (Ic = —3A, Ib = - 0 .3 A ) : P q = 25W (Tc = 25°C) 2SD1406 t 3 > -/ ') ¿ y i' ') hz * 19 t -te (Ta = 25°C) HO •¡n v-vi 3 l'i' sû y ^ - ; | i l ï

2SB1015

Abstract: 2SD1406
Contextual Info: JMnic Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

transistor r1009

Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
Contextual Info: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

Toshiba b9 grease

Abstract: grease toshiba b9 EIA and EIAJ standards for marking EIA and EIAJ standards IC 2 5/grease toshiba b9
Contextual Info: 5.1. Quality assurance program The quality and reliability of semiconductor elements are closely related and important to our daily lives as well as to industrial equip­ ment. In this section is explained the quality assurance program as shown in Fig. 1 and