2SC326 Search Results

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC3265 LOW FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm POWER SWITCHING APPLICATIONS. + Q5 2.5— Œ3 FEATURES: . High DC Current Gain : hfE=100~320 . Low Saturation Voltage : VcE sat =0.4V (Max.) (IC=500tnA, lB=20mA) . Suitable for Driver Stage of Small Motor

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1296 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3266 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3266 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SA1296 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 750 mW (Ta = 25°C)

2SC3263

Abstract: 2SA1294 transistor 2sa1294
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1294 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3263 APPLICATIONS ·Designed for audio and general purpose applications

Contextual Info: T O SH IB A 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. 1.6 MAX. N F = 1.7dB, |S2lel2 = 15.0dB f=500M Hz NF = 2dB, |S2lel2= 9-5dB (f = 1000MHz) Q4±a05, 1.7 M A X. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SA1297 TOSHIBA 2 S A 1 297 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 4.2M AX. — I . • • Low Saturation Voltage : V@e (sat)= -0.5V (Max.) @Iq = -2 A Complementary to 2SC3267.

2SC3264

Abstract: 2SA1295 MP100M 2SA1295 2SC3264
Contextual Info: 2SC3264 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1295 •Electrical Characteristics Symbol Conditions 2SC3264 Unit VCB=230V 100max µA VEB=5V 100max µA IC=25mA 230min V 24.4±0.2 VCEO 230 V IEBO VEBO 5 V V(BR)CEO IC 17 A hFE VCE=4V, IC=5A

Contextual Info: MCC TM Micro Commercial Components 2SC3265-O 2SC3265-Y
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC3265-O

Abstract: 2sc3265
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC3265-O 2SC3265-Y Features • Power switching application x Complementary to 2SA1298 x Low frequency power amplifier application

2SC3268

Abstract: EIAJ C-3
Contextual Info: TOSHIBA 2SC3268 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3268 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. NF = 1.7dB, |S2iel2= 15.0dB f = 500MHz NF = 2dB, |S2iel2= 9.5dB (f = 1000MHz) 1.6MAX. Q4±a05. 4.6 M A X . 1.7 MAX.

2SC3216

Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Contextual Info: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265

2SC3260

Abstract: 2-5K1A toshiba
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R A A A n A A f ì - 2SC3260 U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 4.6 MAX. NF = 1.7dB, |S2lel2 = 15.0dB f=500M Hz NF = 2dB, |S 2 i e l 2 = 9-5dB(f=1000M Hz)

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TO SH IBA 2 S A 1 296 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS . 5.1 MAX. • • Low Saturation Voltage : V qe (sat)“ —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

2SA12

Abstract: 2SA1296 2SC3266 SA12
Contextual Info: TOSHIBA 2SA1296 2 S A 1 296 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS . 5.1 M AX. • • Low Saturation Voltage : V qe (sat)= —0-5 (Max.) @Iq = —2A Complementary to 2SC3266.

2SA1297

Abstract: 2SC3267
Contextual Info: 2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1297 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3267. Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: Is ~7 > 'J 7 . $ /Transistors 2SC3269 2SC 3269 H S t È | ÿ 7 0U - ^ N P N v ' j 3 > h 7 > y 7 $ iliiiJEE*illiffl/H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors • • W fi-^ i± [3 |/D im e n s io n s Unit : mm >J V iV v J i- r (B V c e o = 3 0 0 V ) 0

2SC3266

Abstract: 2SA1296
Contextual Info: 2SC3266 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3266 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A) · Complementary to 2SA1296 Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC3267GR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0

2SA1296

Abstract: 2SC3266
Contextual Info: 2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1296 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) @IC = −2 A • Complementary to 2SC3266. Absolute Maximum Ratings (Ta = 25°C)

2SC3266

Contextual Info: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1297

Abstract: 2SC3267
Contextual Info: 2SA1297 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1297 ○ 低周波電力増幅用 ○ 電力スイッチング用 単位: mm • 2SC3267 とコンプリメンタリになります。 • 許容コレクタ損失が大きい。: PC = 400 mW (Ta = 25°C)

2SA1294

Abstract: 2SC3263
Contextual Info: JMnic Product Specification 2SA1294 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SC3263 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-3PN and symbol

2SC3266

Contextual Info: ST 2SC3266 NPN Silicon Epitaxial Planar Transistor for power amplifier applications. and power switching The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.