2SD668 Search Results

2SB648

Abstract: 2SB648A Hitachi DSA001650
Contextual Info: 2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB648 2SB648A Unit Collector to base voltage

2SB694H

Abstract: 2sd717 2SD689 2SD668A 2SB646 2sb678 2SB686 2SD663 2SD666 2SD706
Contextual Info: - 222 - Ta=25'C, * E(](ÎTc=25<C M £ ít rrj £ ¿2! «CEu (V) 2SD661 fâT LF LN A 2SD661A tëT tôT LF LN A 2SD662 2SD662B 2SD663 2SD666 2SD666A 2SD667 2SD667A 2SD668 2SD668A fôT m ±nm ai B aL ai Hi hä B5: 2SD670H BÎL HÎL BÍL ZÒUOM i l i 2SD669

2SB648

Abstract: 2SD663 2SB648A 2SB64 2SB64R
Contextual Info: HITACHI 2SB648, 2SB648A SILICON PNP EPITAXIAL LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SD668/A f! Li. $ PO- C3 1. E :m iiic r 2. C o lle c to r 3. Base P ? m c n ? i-ony ir> m w (JEPEC TO-126 MOO.) M ABSOLUTE M AXIM UM RATINGS <Ta=25°C)

Contextual Info: H ITACH I 2SD668, 2SD668A S IL IC O N N P N E P iT A X IA L LOW FREQUENCY HIGH VOLTAGE AMPLIFIER COMPLEMENTARY PAIR WITH 2SB648/A I l il MIS 43.7x07 î4 ; t> \f 15.61 0.5 l?in<ues * ' *.1; x g t . C o iU 'i.3 0 i f S •!<; n s ii:s< - ' 2J Í 0J JEDEC TO-126 MOD.

2sd668

Abstract: 2sd668a hitachi 180 c
Contextual Info: 2SD668,2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline T O -1 2 6 M O D I 1. E m itte r 2. C o lle c to r 3. B a se Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD668 TRANSISTOR NPN TO – 126 FEATURES z Low Frequency Power Amplifier 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

2SD668A

Abstract: 2SD668 Hitachi DSA00164
Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit Collector to base voltage

2SB648

Abstract: 2SB648A
Contextual Info: 2SB648, 2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline T O -126 MOD Í | 1. Em itter 2. Collector 3. Base 1 „ ^ 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648

2SD668

Abstract: 2Sd668A
Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD Ì 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD668 2SD668A Unit

2SB648

Abstract: 2SB648A
Contextual Info: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD I 1 1 Absolute Maximum Ratings Ta = 1. Emitter 2. Collector 3. Base Qill 25 °C Ratings Item Symbol 2SB648 2SB648A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD668/2SD668A TRANSISTOR NPN TO – 126C FEATURES z Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD668

Abstract: 2SD668A
Contextual Info: HITACHI 2SD668, 2SD668A SILICON NPN EPITAXIAL LOW FREQ UEN C Y HIGH VOLTAGE AM PLIFIER COM PLEMENTARY PAIR WITH 2SB643/A I* eg O 11.0 i—I CÒ •o\| 2 15.6±0.S 3.7±0.7 I , Hi I lilt'd 1. it C o lltc io r .1. ik isc Dii»Knsiorvs in m ini I— -I 2,a±D.;t

Contextual Info: 2SB648,2SB648A Silicon PNP Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD i 1 1 . Em itter 2. Collector 1 3. Base „ ill 3 Absolute Maximum Ratings Ta 25°C = Ratings Item Symbol 2SB648

2SD668

Contextual Info: 2SD668, 2SD668A Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier complementary pair with 2SB648/A Outline TO -126 MOD I 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD668 2SD668A

2SD588

Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*

2SC144

Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A
Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845

2SC2291

Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
Contextual Info: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

616A TRANSISTOR

Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink