2SB64 Search Results

QW-R204-005

Contextual Info: UTC 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

2SB644

Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to

2Sb647a

Abstract: 2sb647
Contextual Info: 2SB647 / 2SB647A PNP General Purpose Transistors P b Lead Pb -Free 2 1 3 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 120 V Emitter-Base Voltage VEBO

2SB645

Contextual Info: SavantIC Semiconductor Product Specification 2SB645 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·For power switching and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SB649

Abstract: 669a 2SB649A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity

2SD669

Abstract: 2SD669A ALL 2SD669A DSA003644
Contextual Info: 2SD669, 2SD669A Silicon NPN Epitaxial ADE-208-899 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SD669, 2SD669A Absolute Maximum Ratings (Ta = 25°C)

2SD667

Abstract: 2SD667A Hitachi DSA00108
Contextual Info: 2SD667, 2SD667A Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD667, 2SD667A Absolute Maximum Ratings Ta = 25°C Item Symbol 2SD667 2SD667A

transistor 2sb649

Abstract: transistor 160v 1.5a pnp 2SB649 2SD669
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669

transistor 649A

Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD669A

Abstract: 2SD669 to-126 transistor transistor 2sd669 2DS669 pc123
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor 649A

Abstract: 2SB649 2SB649A 649a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB648

Abstract: 2SB648A Hitachi DSA001650
Contextual Info: 2SB648, 2SB648A Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD668/A Outline TO-126 MOD 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SB648 2SB648A Unit Collector to base voltage

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

2SB737

Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
Contextual Info: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Low Frequency Power Amplifier Complementary Pair with 2SB647/A Epoxy meets UL 94 V-0 flammability rating

Contextual Info: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126 TRANSISTOR NPN FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB649/A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD669 2SD669A TO-126C TRANSISTOR NPN FEATURES Low frequency power amplifier complementary pair with 2SB649/A 1. EMITTER 2. COLLECTOR 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB642

Contextual Info: Transistors 2SB0642 2SB642 Silicon PNP epitaxial planar type For low-power general amplification Unit: mm 2.5±0.1 • Absolute Maximum Ratings (Ta=25˚C) (1.0) (0.85) 0.45±0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2sb644

Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings

2sb647

Contextual Info: MCC TM Micro Commercial Components 2SB647 A -B 2SB647(A)-C 2SB647-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Epoxy meets UL 94 V-0 flammability rating

2SB647C

Abstract: 2SB647 2SB647AC 2SB647A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter

2SB647AC

Abstract: 2SB647C 2SB647DTZ-E 2SB647 2SB647A 2SB647A equivalent 2SB647CTZ-E PRSS0003DC-A
Contextual Info: 2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 Previous ADE-208-1025 Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter