2SB643 Search Results

2SB644

Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to

2sb644

Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings

2sb644

Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to 2SD0638

2SB644

Abstract: 2SB0643 2SB0644 2SB643
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) 2SB0643 Collector-base voltage (Emitter open) 2SB0644 Collector-emitter voltage 2SB0643 (Base open)

2SB644

Abstract: transistor 2sd638 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639 transistor 2sb643
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) M Di ain sc te on na tin nc ue e/ d Unit: mm 2.5±0.1 Parameter Symbol Collector to

2SB644

Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD0638 base voltage 2SD0639 Collector to

2SB644

Abstract: 2SB0643 2SB0644 2SB643
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 Symbol Rating Unit VCBO −30 V (0.85) −60 2SB0644 Collector-emitter voltage 2SB0643 (Base open)

2SB644

Abstract: 2SD0638 2SB0643 2SB0644 2SB643 2SD0639 2SD638 2SD639 transistor 2sb643 transistor 2sd638
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 6.9±0.1 Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to 2SB0643

2SD0638

Abstract: 2SB0643 2SB643 2SD638 2SD63
Contextual Info: Transistors 2SD0638 2SD638 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) Unit: mm Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

2SB644

Abstract: transistor 2sb643 2SB643 2sd638 2SD639 2sb643 complementary
Contextual Info: Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 Unit: mm 6.9±0.1 Symbol Collector to 2SB643 base voltage 2SB644 Collector to 2SB643 Ratings –30 VCBO –60 VCEO emitter voltage 2SB644

2SB0643

Abstract: 2SB643 2SD0638 2SD638
Contextual Info: Transistors 2SD0638 2SD638 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 25 V Emitter-base voltage (Collector open)

2SB0643

Abstract: 2SB643 2SD0638 2SD638
Contextual Info: Transistors 2SD0638 2SD638 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) Unit: mm 2.5±0.1 Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 25 V Emitter-base voltage (Collector open)

2SB0643

Abstract: 2SB0644 2SB643 2SB644
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type For low-frequency general amplification Unit: mm 2.5±0.1 (1.5) Unit −30 V Emitter-base voltage (Collector open) VEBO Peak collector current Collector power dissipation Junction temperature

2sb644

Abstract: 2SD639
Contextual Info: Transistors 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planar type Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 • Absolute Maximum Ratings Ta = 25°C 2SB0643 Collector to emitter voltage 2SB0643 Symbol Rating Unit VCBO −30 V −60

2SB0643

Abstract: 2SB0644 2SB643 2SB644 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 Ratings

2SD668

Abstract: 2SD668A
Contextual Info: HITACHI 2SD668, 2SD668A SILICON NPN EPITAXIAL LOW FREQ UEN C Y HIGH VOLTAGE AM PLIFIER COM PLEMENTARY PAIR WITH 2SB643/A I* eg O 11.0 i—I CÒ •o\| 2 15.6±0.S 3.7±0.7 I , Hi I lilt'd 1. it C o lltc io r .1. ik isc Dii»Knsiorvs in m ini I— -I 2,a±D.;t

2sb644

Contextual Info: Transistor 2SD0638, 2SD0639 2SD638, 2SD639 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) and 2SB0644 (2SB644) Unit: mm 2.5±0.1 Parameter 2SD0638 base voltage 2SD0639 Collector to 2SD0638 VEBO

Contextual Info: Transistors 2SD0638 2SD638 Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 25 V Emitter-base voltage (Collector open)

transistor 2sd638

Abstract: 2Sd638 2SD639 32-Bit Parallel-IN Serial-OUT Shift Register 2SB643 2SB644
Contextual Info: Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 Unit: mm 6.9±0.1 Parameter Symbol Collector to 2SD638 base voltage 2SD639 Collector to 2SD638 Ratings 30 VCBO 25 VEBO 7 V

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD588

Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
Contextual Info: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*

2SA1015

Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Contextual Info: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for